Mark D. Dupuis

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South Burlington, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Bipolar transistor structure and method including emitter-base inte...
- Patent number 8,482,101
- Issue date Jul 9, 2013
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-modified device structures, methods of fabricating such stre...
- Patent number 7,843,039
- Issue date Nov 30, 2010
- International Business Machines Corporation
- Edward C. Cooney, III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,413,967
- Issue date Aug 19, 2008
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Yield improvement in silicon-germanium epitaxial growth
- Patent number 7,118,995
- Issue date Oct 10, 2006
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI pull-down to control SiGe facet growth
- Patent number 6,936,509
- Issue date Aug 30, 2005
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sti pull-down to control SiGe facet growth
- Patent number 6,674,102
- Issue date Jan 6, 2004
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE AND METHOD INCLUDING EMITTER-BASE INTE...
- Publication number 20100320571
- Publication date Dec 23, 2010
- International Business Machines Corporation
- John J. Benoit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-MODIFIED DEVICE STRUCTURES, METHODS OF FABRICATING SUCH STRE...
- Publication number 20090206449
- Publication date Aug 20, 2009
- Edward C. Cooney III
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20060289959
- Publication date Dec 28, 2006
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH
- Publication number 20050260826
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Mark D. Dupuis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sti pull-down to control SiGe facet growth
- Publication number 20040063273
- Publication date Apr 1, 2004
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sti pull-down to control SiGe facet growth
- Publication number 20020096693
- Publication date Jul 25, 2002
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS