Mark Dipsey

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Somerville, MA, US

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Patents Grantslast 30 patents

Information Patent Grant
III-Nitride transistor with a cap layer for RF operation
- Patent number 11,695,052
- Issue date Jul 4, 2023
- Finwave Semiconductor, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-NITRIDE TRANSISTOR WITH HIGH N DOPING IN ACCESS REGION
- Publication number 20250159960
- Publication date May 15, 2025
- Finwave Semiconductor, Inc.
- Dongfei Pei
Information Patent Application
III-Nitride Transistor With A Cap Layer For RF Operation
- Publication number 20210265477
- Publication date Aug 26, 2021
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS