Mark S. Rodder

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit with buried power rail and methods of manufactur...
- Patent number 12,230,570
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor cell blocks having non-integer multiple of cell heights
- Patent number 12,080,703
- Issue date Sep 3, 2024
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,983,622
- Issue date May 14, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming multiple-Vt FETS for CMOS circuit applications
- Patent number 11,749,739
- Issue date Sep 5, 2023
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,727,258
- Issue date Aug 15, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming a thermal shield in a monolithic 3-d integrated c...
- Patent number 11,605,574
- Issue date Mar 14, 2023
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density neuromorphic computing element
- Patent number 11,586,901
- Issue date Feb 21, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor cell blocks having non-integer multiple of cell heights
- Patent number 11,552,067
- Issue date Jan 10, 2023
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of forming multi-threshold voltage devices and devices so fo...
- Patent number 11,476,121
- Issue date Oct 18, 2022
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...
- Patent number 11,461,620
- Issue date Oct 4, 2022
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 11,404,405
- Issue date Aug 2, 2022
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a variation resistant magnetic junc...
- Patent number 11,290,110
- Issue date Mar 29, 2022
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of manufacturing an integrated circuit with buried power rail
- Patent number 11,233,008
- Issue date Jan 25, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method of modulating threshold voltage for fin field...
- Patent number 11,211,493
- Issue date Dec 28, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming sacrificial self-aligned features for assisting d...
- Patent number 11,189,600
- Issue date Nov 30, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming isolation dielectrics for stacked field effect tr...
- Patent number 11,158,738
- Issue date Oct 26, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming multiple-Vt FETs for CMOS circuit applications
- Patent number 11,088,258
- Issue date Aug 10, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor field effect transistor with crystalline...
- Patent number 11,081,590
- Issue date Aug 3, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a thermal shield in a monolithic 3-D integrated c...
- Patent number 10,971,420
- Issue date Apr 6, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with decoupled channel and methods of manuf...
- Patent number 10,964,698
- Issue date Mar 30, 2021
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with reduced extension resistance and methods of manufacturi...
- Patent number 10,957,786
- Issue date Mar 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low current leakage finFET and methods of making the same
- Patent number 10,930,768
- Issue date Feb 23, 2021
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for providing a reverse engineering resistant har...
- Patent number 10,916,513
- Issue date Feb 9, 2021
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
Integrated circuit including field effect transistors having a cont...
- Patent number 10,910,313
- Issue date Feb 2, 2021
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet field effect transistor cell architecture
- Patent number 10,868,193
- Issue date Dec 15, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including field effect transistors having a cont...
- Patent number 10,861,950
- Issue date Dec 8, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density neuromorphic computing element
- Patent number 10,860,923
- Issue date Dec 8, 2020
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device including a repeater/buffer at upper metal rou...
- Patent number 10,854,591
- Issue date Dec 1, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 10,825,723
- Issue date Nov 3, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 10,811,415
- Issue date Oct 20, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20240379653
- Publication date Nov 14, 2024
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20240256848
- Publication date Aug 1, 2024
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS
- Publication number 20230361194
- Publication date Nov 9, 2023
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20230206053
- Publication date Jun 29, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20230104185
- Publication date Apr 6, 2023
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...
- Publication number 20230004789
- Publication date Jan 5, 2023
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...
- Publication number 20220139835
- Publication date May 5, 2022
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS
- Publication number 20210376109
- Publication date Dec 2, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS
- Publication number 20210265334
- Publication date Aug 26, 2021
- Samsung Electronics Co., Ltd.
- Vassilios Gerousis
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF FORMING A THERMAL SHIELD IN A MONOLITHIC 3-D INTEGRATED C...
- Publication number 20210183729
- Publication date Jun 17, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SACRIFICIAL SELF-ALIGNED FEATURES FOR ASSISTING D...
- Publication number 20210183814
- Publication date Jun 17, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
- Publication number 20210056401
- Publication date Feb 25, 2021
- Samsung Electronics Co., Ltd.
- Borna J. Obradovic
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUS AND METHOD OF MODULATING THRESHOLD VOLTAGE FOR FIN FIELD...
- Publication number 20200403093
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...
- Publication number 20200402909
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ISOLATION DIELECTRICS FOR STACKED FIELD EFFECT TR...
- Publication number 20200403097
- Publication date Dec 24, 2020
- Samsung Electronics Co., Ltd.
- Wei-E WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...
- Publication number 20200381414
- Publication date Dec 3, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...
- Publication number 20200279849
- Publication date Sep 3, 2020
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A THERMAL SHIELD IN A MONOLITHIC 3-D INTEGRATED C...
- Publication number 20200203247
- Publication date Jun 25, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS
- Publication number 20200194569
- Publication date Jun 18, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET FIELD EFFECT TRANSISTOR CELL ARCHITECTURE
- Publication number 20200152801
- Publication date May 14, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20200135735
- Publication date Apr 30, 2020
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME
- Publication number 20200135549
- Publication date Apr 30, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME
- Publication number 20200127125
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...
- Publication number 20200127123
- Publication date Apr 23, 2020
- Samsung Electronics Co., Ltd.
- Joon Goo Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS
- Publication number 20200035838
- Publication date Jan 30, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...
- Publication number 20190385856
- Publication date Dec 19, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...
- Publication number 20190318998
- Publication date Oct 17, 2019
- Samsung Electronics Co., Ltd.
- Harsono S. Simka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SEPARATION OF PARTIAL GAA FETS
- Publication number 20190181140
- Publication date Jun 13, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...
- Publication number 20190148508
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Mark S. Rodder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTORS HAVING A CONT...
- Publication number 20190148298
- Publication date May 16, 2019
- Samsung Electronics Co., Ltd.
- Rwik Sengupta
- H01 - BASIC ELECTRIC ELEMENTS

Mark S. Rodder

Person

Patents Grantslast 30 patents

Integrated circuit with buried power rail and methods of manufactur...

Semiconductor cell blocks having non-integer multiple of cell heights

High-density neuromorphic computing element

Method of forming multiple-Vt FETS for CMOS circuit applications

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

Method of forming a thermal shield in a monolithic 3-d integrated c...

High-density neuromorphic computing element

Semiconductor cell blocks having non-integer multiple of cell heights

Method of forming multi-threshold voltage devices and devices so fo...

Multi-bit, SoC-compatible neuromorphic weight cell using ferroelect...

Semiconductor device including a repeater/buffer at upper metal rou...

Method and system for providing a variation resistant magnetic junc...

Method of manufacturing an integrated circuit with buried power rail

Apparatus and method of modulating threshold voltage for fin field...

Method of forming sacrificial self-aligned features for assisting d...

Method of forming isolation dielectrics for stacked field effect tr...

Method of forming multiple-Vt FETs for CMOS circuit applications

Metal oxide semiconductor field effect transistor with crystalline...

Method of forming a thermal shield in a monolithic 3-D integrated c...

Field effect transistor with decoupled channel and methods of manuf...

FinFET with reduced extension resistance and methods of manufacturi...

Low current leakage finFET and methods of making the same

Method and system for providing a reverse engineering resistant har...

Integrated circuit including field effect transistors having a cont...

Nanosheet field effect transistor cell architecture

Integrated circuit including field effect transistors having a cont...

High-density neuromorphic computing element

Semiconductor device including a repeater/buffer at upper metal rou...

Semiconductor device and method for making the same

Semiconductor device and method for making the same

Patents Applicationslast 30 patents

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

MULTI-BIT, SoC-COMPATIBLE NEUROMORPHIC WEIGHT CELL USING FERROELECT...

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...

METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS

SEMICONDUCTOR CELL BLOCKS HAVING NON-INTEGER MULTIPLE OF CELL HEIGHTS

METHOD OF FORMING A THERMAL SHIELD IN A MONOLITHIC 3-D INTEGRATED C...

METHOD OF FORMING SACRIFICIAL SELF-ALIGNED FEATURES FOR ASSISTING D...

HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT

APPARATUS AND METHOD OF MODULATING THRESHOLD VOLTAGE FOR FIN FIELD...

INTEGRATED CIRCUIT WITH BURIED POWER RAIL AND METHODS OF MANUFACTUR...

METHOD OF FORMING ISOLATION DIELECTRICS FOR STACKED FIELD EFFECT TR...

SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT UPPER METAL ROU...

FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...

METHOD OF FORMING A THERMAL SHIELD IN A MONOLITHIC 3-D INTEGRATED C...

METHOD OF FORMING MULTIPLE-VT FETS FOR CMOS CIRCUIT APPLICATIONS

NANOSHEET FIELD EFFECT TRANSISTOR CELL ARCHITECTURE

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME

LOW CURRENT LEAKAGE FINFET AND METHODS OF MAKING THE SAME

FINFET WITH REDUCED EXTENSION RESISTANCE AND METHODS OF MANUFACTURI...

METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS

METHOD OF FORMING MULTI-THRESHOLD VOLTAGE DEVICES AND DEVICES SO FO...

METHOD AND SYSTEM FOR PROVIDING A REVERSE-ENGINEERING RESISTANT HAR...

DIELECTRIC SEPARATION OF PARTIAL GAA FETS

FIELD EFFECT TRANSISTOR WITH DECOUPLED CHANNEL AND METHODS OF MANUF...

INTEGRATED CIRCUIT INCLUDING FIELD EFFECT TRANSISTORS HAVING A CONT...