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Mark S. Usefara
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Baltimore, MD, US
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last 30 patents
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Patent Grant
Method of producing large area SiC substrates
Patent number
7,888,248
Issue date
Feb 15, 2011
Northrop Grumman Systems Corporation
Narsingh Bahadur Singh
Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
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last 30 patents
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Patent Application
METHOD AND APPARATUS FOR GROWTH OF HIGH PURITY 6H-SIC SINGLE CRYSTAL
Publication number
20090220801
Publication date
Sep 3, 2009
Brian Wagner
C30 - CRYSTAL GROWTH
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Patent Application
Method of producing large area SiC substrates
Publication number
20090014756
Publication date
Jan 15, 2009
Narsingh Bahadur Singh
C30 - CRYSTAL GROWTH