Marko Radosavlievic

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Beaverton, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Fabrication of germanium nanowire transistors
- Patent number 8,110,458
- Issue date Feb 7, 2012
- Intel Corporation
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of germanium nanowire transistors
- Patent number 7,727,830
- Issue date Jun 1, 2010
- Intel Corporation
- Been-Yih Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having tensile strained channel and system including same
- Patent number 7,569,869
- Issue date Aug 4, 2009
- Intel Corporation
- Been-Yih Jin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATION OF GERMANIUM NANOWIRE TRANSISTORS
- Publication number 20100200835
- Publication date Aug 12, 2010
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Fabrication of germanium nanowire transistors
- Publication number 20090170251
- Publication date Jul 2, 2009
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
Transistor having tensile strained channel and system including same
- Publication number 20080237636
- Publication date Oct 2, 2008
- Been-Yih Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained field effect transistors
- Publication number 20060292776
- Publication date Dec 28, 2006
- Been-Yih Jin
- H01 - BASIC ELECTRIC ELEMENTS