Marko Radosavljevic

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride (GaN) selective epitaxial windows for integrated ci...
- Patent number 12,302,618
- Issue date May 13, 2025
- Intel Corporation
- Samuel James Bader
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GaN) integrated circuit technology with optical co...
- Patent number 12,292,608
- Issue date May 6, 2025
- Intel Corporation
- Han Wui Then
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 12,243,875
- Issue date Mar 4, 2025
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 12,230,635
- Issue date Feb 18, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ribbon or wire transistor stack with selective dipole threshold vol...
- Patent number 12,183,739
- Issue date Dec 31, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 12,148,690
- Issue date Nov 19, 2024
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Si-based transistors with non-Si technologies by sem...
- Patent number 12,148,757
- Issue date Nov 19, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plug and recess process for dual metal gate on stacked nanoribbon d...
- Patent number 12,046,652
- Issue date Jul 23, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 12,034,085
- Issue date Jul 9, 2024
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked forksheet transistors
- Patent number 11,996,411
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage regulator circuit including one or more thin-film transistors
- Patent number 11,923,371
- Issue date Mar 5, 2024
- Intel Corporation
- Abhishek A. Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 11,923,370
- Issue date Mar 5, 2024
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 11,894,465
- Issue date Feb 6, 2024
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,862,636
- Issue date Jan 2, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride light emitting devices including a polarization j...
- Patent number 11,799,057
- Issue date Oct 24, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including first and second semiconductor materials betw...
- Patent number 11,777,022
- Issue date Oct 3, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 11,728,346
- Issue date Aug 15, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...
- Publication number 20250133822
- Publication date Apr 24, 2025
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED DRAIN TRANSISTOR FOR HIGH VOLTAGE APPLICATIONS
- Publication number 20250120143
- Publication date Apr 10, 2025
- Intel Corporation
- Sanjay Rangan
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20250113603
- Publication date Apr 3, 2025
- Intel Corporation
- Munzarin QAYYUM
Information Patent Application
STACKED TRANSISTORS WITH STRAIN MATERIALS ON SOURCE AND DRAIN
- Publication number 20250113561
- Publication date Apr 3, 2025
- Intel Corporation
- Rahul Ramaswamy
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
- Publication number 20250113599
- Publication date Apr 3, 2025
- Intel Corporation
- Rachel A. Steinhardt
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHIT...
- Publication number 20250107228
- Publication date Mar 27, 2025
- Intel Corporation
- Nicole K. Thomas
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIAL N...
- Publication number 20250089312
- Publication date Mar 13, 2025
- Intel Corporation
- Rahul RAMASWAMY
Information Patent Application
MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...
- Publication number 20250079292
- Publication date Mar 6, 2025
- Tahoe Research, Ltd.
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Publication number 20250072069
- Publication date Feb 27, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...
- Publication number 20250006737
- Publication date Jan 2, 2025
- Intel Corporation
- Aryan Navabi-Shirazi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS
- Publication number 20250006841
- Publication date Jan 2, 2025
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES
- Publication number 20250006840
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT
- Publication number 20250008852
- Publication date Jan 2, 2025
- Intel Corporation
- Punyashloka Debashis
Information Patent Application
STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS
- Publication number 20250006738
- Publication date Jan 2, 2025
- Intel Corporation
- Nicole K. THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...
- Publication number 20250006791
- Publication date Jan 2, 2025
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...
- Publication number 20240429301
- Publication date Dec 26, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20240332389
- Publication date Oct 3, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20240234422
- Publication date Jul 11, 2024
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222521
- Publication date Jul 4, 2024
- Intel Corporation
- Evan A. Clinton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222376
- Publication date Jul 4, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...
- Publication number 20240213331
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...
- Publication number 20240204059
- Publication date Jun 20, 2024
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS

Marko Radosavljevic

Person

Patents Grantslast 30 patents

Gallium nitride (GaN) selective epitaxial windows for integrated ci...

Gallium nitride (GaN) integrated circuit technology with optical co...

Forksheet transistors with dielectric or conductive spine

Gate-all-around integrated circuit structures having depopulated ch...

Ribbon or wire transistor stack with selective dipole threshold vol...

Microelectronic devices having air gap structures integrated with i...

Integration of Si-based transistors with non-Si technologies by sem...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Group III-nitride (III-N) devices with reduced contact resistance a...

Silicide for group III-nitride devices and methods of fabrication

Plug and recess process for dual metal gate on stacked nanoribbon d...

Variable capacitance device with multiple two-dimensional electron...

III-N transistor arrangements for reducing nonlinearity of off-stat...

Stacked forksheet transistors

Method for fabricating transistor with thinned channel

Tunnel polarization junction III-N transistors

Voltage regulator circuit including one or more thin-film transistors

Forksheet transistors with dielectric or conductive spine

Deep gate-all-around semiconductor device having germanium or group...

Superlattice FINFET with tunable drive current capability

Gate-all-around integrated circuit structures having depopulated ch...

III-N transistors with contacts of modified widths

Group III-nitride light emitting devices including a polarization j...

Integration of III-N transistors and semiconductor layer transfer

Transistors including first and second semiconductor materials betw...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Group III-nitride (III-N) devices with reduced contact resistance a...

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Methods and apparatus to form silicon-based transistors on group II...

Patents Applicationslast 30 patents

RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOL...

EXTENDED DRAIN TRANSISTOR FOR HIGH VOLTAGE APPLICATIONS

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

STACKED TRANSISTORS WITH STRAIN MATERIALS ON SOURCE AND DRAIN

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING STACKED ARCHIT...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DIFFERENTIAL N...

MICROELECTRONIC DEVICES HAVING AIR GAP STRUCTURES INTEGRATED WITH I...

RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

STACKED CMOS TRANSISTOR STRUCTURES WITH COMPLEMENTARY CHANNEL MATER...

TECHNOLOGIES FOR BARRIER LAYERS IN PEROVSKITE TRANSISTORS

NEGATIVE CAPACITANCE FIELD EFFECT TRANSISTOR (NCFET) DEVICES

TWO-TERMINAL FERROELECTRIC PEROVSKITE DIODE MEMORY ELEMENT

STACKED TRANSISTOR STRUCTURES WITH DIFFERENT RIBBON MATERIALS

PEROVSKITE OXIDE FIELD EFFECT TRANSISTOR WITH HIGHLY DOPED SOURCE A...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

PEROVSKITE-BASED FIELD EFFECT TRANSISTOR (FET) DEVICES ENABLED BY E...

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...

STACKED FORKSHEET TRANSISTORS

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...