Marko Radosavljevic

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices having air gap structures integrated with i...
- Patent number 12,148,690
- Issue date Nov 19, 2024
- Tahoe Research, LTD.
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Si-based transistors with non-Si technologies by sem...
- Patent number 12,148,757
- Issue date Nov 19, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 12,125,888
- Issue date Oct 22, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicide for group III-nitride devices and methods of fabrication
- Patent number 12,080,763
- Issue date Sep 3, 2024
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plug and recess process for dual metal gate on stacked nanoribbon d...
- Patent number 12,046,652
- Issue date Jul 23, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device with multiple two-dimensional electron...
- Patent number 12,034,085
- Issue date Jul 9, 2024
- Intel Corporation
- Harald Gossner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistor arrangements for reducing nonlinearity of off-stat...
- Patent number 12,027,613
- Issue date Jul 2, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked forksheet transistors
- Patent number 11,996,411
- Issue date May 28, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating transistor with thinned channel
- Patent number 11,978,799
- Issue date May 7, 2024
- Tahoe Research, LTD.
- Justin K. Brask
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel polarization junction III-N transistors
- Patent number 11,942,378
- Issue date Mar 26, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage regulator circuit including one or more thin-film transistors
- Patent number 11,923,371
- Issue date Mar 5, 2024
- Intel Corporation
- Abhishek A. Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forksheet transistors with dielectric or conductive spine
- Patent number 11,923,370
- Issue date Mar 5, 2024
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate-all-around semiconductor device having germanium or group...
- Patent number 11,894,465
- Issue date Feb 6, 2024
- Google LLC
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,862,636
- Issue date Jan 2, 2024
- Intel Corporation
- Nicole Thomas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with contacts of modified widths
- Patent number 11,848,362
- Issue date Dec 19, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride light emitting devices including a polarization j...
- Patent number 11,799,057
- Issue date Oct 24, 2023
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of III-N transistors and semiconductor layer transfer
- Patent number 11,791,221
- Issue date Oct 17, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including first and second semiconductor materials betw...
- Patent number 11,777,022
- Issue date Oct 3, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...
- Patent number 11,757,027
- Issue date Sep 12, 2023
- Intel Corporation
- Rahul Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride (III-N) devices with reduced contact resistance a...
- Patent number 11,728,346
- Issue date Aug 15, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-Nitride devices on SOI substrates having a compliant layer
- Patent number 11,715,791
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-induced threshold voltage tuning in III-N transistors
- Patent number 11,715,790
- Issue date Aug 1, 2023
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus to form silicon-based transistors on group II...
- Patent number 11,715,799
- Issue date Aug 1, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio non-planar capacitors formed via cavity fill
- Patent number 11,710,765
- Issue date Jul 25, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of a thin film transistor over a complimenta...
- Patent number 11,699,704
- Issue date Jul 11, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N transistors with local stressors for threshold voltage control
- Patent number 11,670,709
- Issue date Jun 6, 2023
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit with indium nitride quantum well
- Patent number 11,670,637
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-N nanostructures formed via cavity fill
- Patent number 11,670,686
- Issue date Jun 6, 2023
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...
- Publication number 20240332389
- Publication date Oct 3, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FORKSHEET TRANSISTORS
- Publication number 20240234422
- Publication date Jul 11, 2024
- Intel Corporation
- Cheng-Ying HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...
- Publication number 20240222440
- Publication date Jul 4, 2024
- Intel Corporation
- Samuel James BADER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222521
- Publication date Jul 4, 2024
- Intel Corporation
- Evan A. Clinton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222376
- Publication date Jul 4, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...
- Publication number 20240213331
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH
- Publication number 20240213140
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS
- Publication number 20240213118
- Publication date Jun 27, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...
- Publication number 20240204091
- Publication date Jun 20, 2024
- Intel Corporation
- Heli Vora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...
- Publication number 20240204059
- Publication date Jun 20, 2024
- Intel Corporation
- Pratik KOIRALA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW
- Publication number 20240194672
- Publication date Jun 13, 2024
- Intel Corporation
- Bharath Bangalore Rajeeva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTED SUB-FIN DIODES
- Publication number 20240170581
- Publication date May 23, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE
- Publication number 20240153956
- Publication date May 9, 2024
- Intel Corporation
- Seung Hoon SUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS
- Publication number 20240128269
- Publication date Apr 18, 2024
- Intel Corporation
- Abhishek A. SHARMA
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...
- Publication number 20240105822
- Publication date Mar 28, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20240088153
- Publication date Mar 14, 2024
- Intel Corporation
- Nicole THOMAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION
- Publication number 20240021725
- Publication date Jan 18, 2024
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...
- Publication number 20230420574
- Publication date Dec 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS
- Publication number 20230420528
- Publication date Dec 28, 2023
- Intel Corporation
- Nitesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS
- Publication number 20230420562
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES
- Publication number 20230402507
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...
- Publication number 20230402513
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS

Marko Radosavljevic

Person

Patents Grantslast 30 patents

Microelectronic devices having air gap structures integrated with i...

Integration of Si-based transistors with non-Si technologies by sem...

Gallium nitride (GAN) three-dimensional integrated circuit technology

Group III-nitride (III-N) devices with reduced contact resistance a...

Silicide for group III-nitride devices and methods of fabrication

Plug and recess process for dual metal gate on stacked nanoribbon d...

Variable capacitance device with multiple two-dimensional electron...

III-N transistor arrangements for reducing nonlinearity of off-stat...

Stacked forksheet transistors

Method for fabricating transistor with thinned channel

Tunnel polarization junction III-N transistors

Voltage regulator circuit including one or more thin-film transistors

Forksheet transistors with dielectric or conductive spine

Deep gate-all-around semiconductor device having germanium or group...

Superlattice FINFET with tunable drive current capability

Gate-all-around integrated circuit structures having depopulated ch...

III-N transistors with contacts of modified widths

Group III-nitride light emitting devices including a polarization j...

Integration of III-N transistors and semiconductor layer transfer

Transistors including first and second semiconductor materials betw...

E-D mode 2DEG FET with gate spacer to locally tune VT and improve b...

Group III-nitride (III-N) devices with reduced contact resistance a...

Group III-Nitride devices on SOI substrates having a compliant layer

Charge-induced threshold voltage tuning in III-N transistors

Methods and apparatus to form silicon-based transistors on group II...

High aspect ratio non-planar capacitors formed via cavity fill

Monolithic integration of a thin film transistor over a complimenta...

III-N transistors with local stressors for threshold voltage control

Logic circuit with indium nitride quantum well

III-N nanostructures formed via cavity fill

Patents Applicationslast 30 patents

PLUG AND RECESS PROCESS FOR DUAL METAL GATE ON STACKED NANORIBBON D...

STACKED FORKSHEET TRANSISTORS

TRANSISTOR WITH A BODY AND BACK GATE STRUCTURE IN DIFFERENT MATERIA...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

GALLIUM NITRIDE (GAN) LAYER ON SUBSTRATE CARBURIZATION FOR INTEGRAT...

INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE HIGH

GALLIUM NITRIDE (GAN) DEVICES WITH THROUGH-SILICON VIAS

LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR...

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

GALLIUM NITRIDE (GAN) WITH INTERLAYERS FOR INTEGRATED CIRCUIT TECHN...

MULTI-PITCH PATTERNING THROUGH ONE-STEP FLOW

BACKSIDE CONTACTED SUB-FIN DIODES

FORKSHEET TRANSISTORS WITH DIELECTRIC OR CONDUCTIVE SPINE

VOLTAGE REGULATOR CIRCUIT INCLUDING ONE OR MORE THIN-FILM TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

STACKED PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DE...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

GALLIUM NITRIDE (GAN) TRANSISTORS WITH LATERAL DRAIN DEPLETION

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES

MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...

SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS

DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...