Markus Bina

Person

Sauerlach, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Double gate transistor device and method of operating
- Patent number 12,003,231
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode and method of manufacturing a power diode
- Patent number 10,978,596
- Issue date Apr 13, 2021
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a barrier region
- Patent number 10,923,578
- Issue date Feb 16, 2021
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 10,903,353
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Markus Bina
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
IGBT with dV/dt controllability
- Patent number 10,840,362
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability
- Patent number 10,644,141
- Issue date May 5, 2020
- Infineon Technologies Austria AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing IGBT with dV/dt controllability
- Patent number 10,615,272
- Issue date Apr 7, 2020
- Infineon Technologies AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel bipolar power semiconductor device with P-layer in the dr...
- Patent number 10,546,939
- Issue date Jan 28, 2020
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 10,530,360
- Issue date Jan 7, 2020
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,355,116
- Issue date Jul 16, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel bipolar power semiconductor device with p-layer in the dr...
- Patent number 10,332,973
- Issue date Jun 25, 2019
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with dV/dt controllability and cross-tre...
- Patent number 10,304,952
- Issue date May 28, 2019
- Infineon Technologies AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 10,276,681
- Issue date Apr 30, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Current measurement in a power semiconductor device
- Patent number 10,153,764
- Issue date Dec 11, 2018
- Infineon Technologies AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising transistor cell units with differen...
- Patent number 10,109,624
- Issue date Oct 23, 2018
- Infineon Technologies AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
n-channel bipolar power semiconductor device with p-layer in the dr...
- Patent number 9,978,851
- Issue date May 22, 2018
- Infineon Technologies AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20210226072
- Publication date Jul 22, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20200136608
- Publication date Apr 30, 2020
- Infineon Technologies Austria AG
- Markus Bina
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20190288088
- Publication date Sep 19, 2019
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having a Cross-Trench Arrangement
- Publication number 20190273155
- Publication date Sep 5, 2019
- Infineon Technologies Austria AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20190259863
- Publication date Aug 22, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability
- Publication number 20190214490
- Publication date Jul 11, 2019
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Gate Transistor Device and Method of Operating
- Publication number 20190198664
- Publication date Jun 27, 2019
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Barrier Region
- Publication number 20190189772
- Publication date Jun 20, 2019
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing IGBT with dV/dt Controllability
- Publication number 20190123185
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Antonio Vellei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with dV/dt Controllability
- Publication number 20190123186
- Publication date Apr 25, 2019
- INFINEON TECHNOLOGIES AG
- Alexander Philippou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20190058065
- Publication date Feb 21, 2019
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with dV/dt Controllability and Cross-Tre...
- Publication number 20180342605
- Publication date Nov 29, 2018
- INFINEON TECHNOLOGIES AG
- Matteo Dainese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...
- Publication number 20180308698
- Publication date Oct 25, 2018
- INFINEON TECHNOLOGIES AG
- Markus Bina
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20180269313
- Publication date Sep 20, 2018
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20180269304
- Publication date Sep 20, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...
- Publication number 20180019319
- Publication date Jan 18, 2018
- INFINEON TECHNOLOGIES AG
- Roman Baburske
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING TRANSISTOR CELL UNITS WITH DIFFEREN...
- Publication number 20170309619
- Publication date Oct 26, 2017
- INFINEON TECHNOLOGIES AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Gate Transistor Device and Method of Operating
- Publication number 20170250260
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double Gate Transistor Device and Method of Operating
- Publication number 20170250685
- Publication date Aug 31, 2017
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Current Measurement in a Power Semiconductor Device
- Publication number 20170170823
- Publication date Jun 15, 2017
- INFINEON TECHNOLOGIES AG
- Markus Bina
- G01 - MEASURING TESTING

Markus Bina

Person

Patents Grantslast 30 patents

Double gate transistor device and method of operating

Power diode and method of manufacturing a power diode

Semiconductor device comprising a barrier region

Double gate transistor device and method of operating

IGBT with dV/dt controllability

Power semiconductor device with dV/dt controllability

Method for producing IGBT with dV/dt controllability

N-channel bipolar power semiconductor device with P-layer in the dr...

Double gate transistor device and method of operating

Power semiconductor device

N-channel bipolar power semiconductor device with p-layer in the dr...

Power semiconductor device with dV/dt controllability and cross-tre...

Double gate transistor device and method of operating

Current measurement in a power semiconductor device

Semiconductor device comprising transistor cell units with differen...

n-channel bipolar power semiconductor device with p-layer in the dr...

Patents Applicationslast 30 patents

Power Diode and Method of Manufacturing a Power Diode

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

Power Semiconductor Device Having a Cross-Trench Arrangement

POWER SEMICONDUCTOR DEVICE

Power Semiconductor Device with dV/dt Controllability

Double Gate Transistor Device and Method of Operating

Semiconductor Device Comprising a Barrier Region

Method for Producing IGBT with dV/dt Controllability

IGBT with dV/dt Controllability

Power Diode and Method of Manufacturing a Power Diode

Power Semiconductor Device with dV/dt Controllability and Cross-Tre...

APPARATUS AND METHOD FOR NEUTRON TRANSMUTATION DOPING OF SEMICONDUC...

POWER SEMICONDUCTOR DEVICE

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

N-CHANNEL BIPOLAR POWER SEMICONDUCTOR DEVICE WITH P-LAYER IN THE DR...

SEMICONDUCTOR DEVICE COMPRISING TRANSISTOR CELL UNITS WITH DIFFEREN...

Double Gate Transistor Device and Method of Operating

Double Gate Transistor Device and Method of Operating

Current Measurement in a Power Semiconductor Device