Markus Forsberg

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a high-K gate dielectric above an STI r...
- Patent number 9,659,928
- Issue date May 23, 2017
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for self-aligned removal of a high-K gate dielectric above a...
- Patent number 9,023,712
- Issue date May 5, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Temperature monitoring in a semiconductor device by using a PN junc...
- Patent number 8,796,807
- Issue date Aug 5, 2014
- Advanced Micro Devices, Inc.
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried etch stop layer in trench isolation structures for superior...
- Patent number 8,334,573
- Issue date Dec 18, 2012
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising isolation trenches inducing differe...
- Patent number 8,138,571
- Issue date Mar 20, 2012
- GLOBALFOUNDRIES Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing lithography capabilities during gate formation...
- Patent number 8,101,512
- Issue date Jan 24, 2012
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI device having a substrate diode formed by reduced implantation...
- Patent number 8,097,519
- Issue date Jan 17, 2012
- Advanced Micro Devices, Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor device comprising isolation trench...
- Patent number 7,547,610
- Issue date Jun 16, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION
- Publication number 20150187765
- Publication date Jul 2, 2015
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNC...
- Publication number 20120025276
- Publication date Feb 2, 2012
- Advanced Micro Devices, Inc.
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...
- Publication number 20110049637
- Publication date Mar 3, 2011
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20090236667
- Publication date Sep 24, 2009
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUN...
- Publication number 20090218601
- Publication date Sep 3, 2009
- Rolf Stephan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI DEVICE HAVING A SUBSTRATE DIODE FORMED BY REDUCED IMPLANTATION...
- Publication number 20090111223
- Publication date Apr 30, 2009
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF-ALIGNED REMOVAL OF A HIGH-K GATE DIELECTRIC ABOVE A...
- Publication number 20090057813
- Publication date Mar 5, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...
- Publication number 20080079085
- Publication date Apr 3, 2008
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ENHANCING LITHOGRAPHY CAPABILITIES DURING GATE FORMATION...
- Publication number 20080026552
- Publication date Jan 31, 2008
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLA...
- Publication number 20070278596
- Publication date Dec 6, 2007
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS

Markus Forsberg

Person

Patents Grantslast 30 patents

Semiconductor device having a high-K gate dielectric above an STI r...

Method for self-aligned removal of a high-K gate dielectric above a...

Temperature monitoring in a semiconductor device by using a PN junc...

Buried etch stop layer in trench isolation structures for superior...

Semiconductor device comprising isolation trenches inducing differe...

Method of enhancing lithography capabilities during gate formation...

SOI device having a substrate diode formed by reduced implantation...

Method of making a semiconductor device comprising isolation trench...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC ABOVE AN STI REGION

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNC...

BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING AN PN JUN...

SOI DEVICE HAVING A SUBSTRATE DIODE FORMED BY REDUCED IMPLANTATION...

METHOD FOR SELF-ALIGNED REMOVAL OF A HIGH-K GATE DIELECTRIC ABOVE A...

SEMICONDUCTOR DEVICE COMPRISING ISOLATION TRENCHES INDUCING DIFFERE...

METHOD OF ENHANCING LITHOGRAPHY CAPABILITIES DURING GATE FORMATION...

METHOD OF INCREASING TRANSISTOR DRIVE CURRENT BY RECESSING AN ISOLA...