Markus Schmitt

Person

Neubiberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Latch-up resistant transistor device
- Patent number 10,943,987
- Issue date Mar 9, 2021
- Infineon Technologies Austria AG
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 10,741,541
- Issue date Aug 11, 2020
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with buffer region
- Patent number 10,692,970
- Issue date Jun 23, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Latch-up resistant transistor
- Patent number 10,374,056
- Issue date Aug 6, 2019
- Infineon Technologies Austria AG
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation-hardened power semiconductor devices and methods of formi...
- Patent number 10,256,325
- Issue date Apr 9, 2019
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,199,367
- Issue date Feb 5, 2019
- Infineon Technologies Dresden GmbH
- Markus Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having pillar regions of differen...
- Patent number 9,947,741
- Issue date Apr 17, 2018
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-compensation device
- Patent number 9,825,165
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with electrostatic discharge protection structure
- Patent number 9,728,529
- Issue date Aug 8, 2017
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor having a doped semiconductor region
- Patent number 9,711,621
- Issue date Jul 18, 2017
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect semiconductor device having alternating n-type and p-t...
- Patent number 9,570,607
- Issue date Feb 14, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a super junction semiconductor device having stri...
- Patent number 9,484,400
- Issue date Nov 1, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising electrostatic discharge protection...
- Patent number 9,472,544
- Issue date Oct 18, 2016
- Infineon Technologies Dresden GmbH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge compensation semiconductor devices
- Patent number 9,209,292
- Issue date Dec 8, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction semiconductor device comprising a cell area and an e...
- Patent number 9,184,277
- Issue date Nov 10, 2015
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a passivation layer and production m...
- Patent number 9,177,829
- Issue date Nov 3, 2015
- Infineon Technologoies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a super junction structure based on a com...
- Patent number 9,070,580
- Issue date Jun 30, 2015
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,815,686
- Issue date Aug 26, 2014
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral trench transistor, as well as a method for its production
- Patent number 8,431,988
- Issue date Apr 30, 2013
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method for producing it
- Patent number 7,973,362
- Issue date Jul 5, 2011
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral MISFET and method for fabricating it
- Patent number 7,821,064
- Issue date Oct 26, 2010
- Infineon Technologies Austria AG
- Michael Rueb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral semiconductor component with a drift zone having at least o...
- Patent number 7,777,278
- Issue date Aug 17, 2010
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation component and process for producing the component
- Patent number 7,126,186
- Issue date Oct 24, 2006
- Infineon Technolgies AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with enhanced avalanche ruggedness
- Patent number 6,838,729
- Issue date Jan 4, 2005
- Infineon Technologies AG
- Andreas Schlögl
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Diffusion Soldering with Contaminant Protection
- Publication number 20220084981
- Publication date Mar 17, 2022
- Victor Verdugo
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Latch-Up Resistant Transistor Device
- Publication number 20190319110
- Publication date Oct 17, 2019
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Buffer Region
- Publication number 20190148484
- Publication date May 16, 2019
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device
- Publication number 20180096985
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20170271319
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Markus Schmitt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Pillar Regions of Differen...
- Publication number 20170148872
- Publication date May 25, 2017
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Latch-Up Resistant Transistor
- Publication number 20170125580
- Publication date May 4, 2017
- Infineon Technologies Austria AG
- Katarzyna Kowalik-Seidl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Electrostatic Discharge Protection...
- Publication number 20160307884
- Publication date Oct 20, 2016
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge-Compensation Device
- Publication number 20160181416
- Publication date Jun 23, 2016
- Infineon Technologies Austria AG
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Super Junction Semiconductor Device Having Stri...
- Publication number 20160104768
- Publication date Apr 14, 2016
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Semiconductor Device Having Alternating N-Type and P-T...
- Publication number 20160064554
- Publication date Mar 3, 2016
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING ELECTROSTATIC DISCHARGE PROTECTION...
- Publication number 20150311191
- Publication date Oct 29, 2015
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Electrostatic Discharge Protection Structure
- Publication number 20150294966
- Publication date Oct 15, 2015
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION M...
- Publication number 20150076597
- Publication date Mar 19, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Compensation Semiconductor Devices
- Publication number 20150021670
- Publication date Jan 22, 2015
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Transistor Having a Doped Semiconductor Region
- Publication number 20140332885
- Publication date Nov 13, 2014
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Super Junction Structure Based On a Com...
- Publication number 20140327069
- Publication date Nov 6, 2014
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Super Junction Structure with Compensat...
- Publication number 20140327104
- Publication date Nov 6, 2014
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation-Hardened Power Semiconductor Devices and Methods of Formi...
- Publication number 20140124851
- Publication date May 8, 2014
- Infineon Technologies Austria AG
- Stefan Gamerith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Super Junction Semiconductor Device Comprising a Cell Area and an E...
- Publication number 20140117437
- Publication date May 1, 2014
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION
- Publication number 20130224921
- Publication date Aug 29, 2013
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
- Publication number 20080237701
- Publication date Oct 2, 2008
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST O...
- Publication number 20080179672
- Publication date Jul 31, 2008
- INFINEON TECHNOLOGIES AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral MISFET and method for fabricating it
- Publication number 20060261384
- Publication date Nov 23, 2006
- Michael Rueb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral trench transistor, as well as a method for its production
- Publication number 20060118862
- Publication date Jun 8, 2006
- Infineon Technologies AG
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral semiconductor component with a drift zone having at least o...
- Publication number 20060006386
- Publication date Jan 12, 2006
- Franz Hirler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component with enhanced avalanche resistance
- Publication number 20030155610
- Publication date Aug 21, 2003
- Andreas Schlogl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compensation component and process for producing the component
- Publication number 20030151087
- Publication date Aug 14, 2003
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS

Markus Schmitt

Person

Patents Grantslast 30 patents

Latch-up resistant transistor device

Method of manufacturing a semiconductor device

Semiconductor device with buffer region

Latch-up resistant transistor

Radiation-hardened power semiconductor devices and methods of formi...

Semiconductor device

Field-effect semiconductor device having pillar regions of differen...

Charge-compensation device

Semiconductor device with electrostatic discharge protection structure

Trench transistor having a doped semiconductor region

Field-effect semiconductor device having alternating n-type and p-t...

Method of forming a super junction semiconductor device having stri...

Semiconductor device comprising electrostatic discharge protection...

Charge compensation semiconductor devices

Super junction semiconductor device comprising a cell area and an e...

Semiconductor component having a passivation layer and production m...

Semiconductor device with a super junction structure based on a com...

Lateral trench transistor, as well as a method for its production

Lateral trench transistor, as well as a method for its production

Semiconductor component and method for producing it

Lateral MISFET and method for fabricating it

Lateral semiconductor component with a drift zone having at least o...

Compensation component and process for producing the component

Semiconductor component with enhanced avalanche ruggedness

Patents Applicationslast 30 patents

Diffusion Soldering with Contaminant Protection

Latch-Up Resistant Transistor Device

Semiconductor Device with Buffer Region

Method of Manufacturing a Semiconductor Device

Semiconductor Device

Field-Effect Semiconductor Device Having Pillar Regions of Differen...

Latch-Up Resistant Transistor

Semiconductor Device Comprising Electrostatic Discharge Protection...

Charge-Compensation Device

Method of Forming a Super Junction Semiconductor Device Having Stri...

Field-Effect Semiconductor Device Having Alternating N-Type and P-T...

SEMICONDUCTOR DEVICE COMPRISING ELECTROSTATIC DISCHARGE PROTECTION...

Semiconductor Device with Electrostatic Discharge Protection Structure

SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION M...

Charge Compensation Semiconductor Devices

Trench Transistor Having a Doped Semiconductor Region

Semiconductor Device with a Super Junction Structure Based On a Com...

Semiconductor Device with a Super Junction Structure with Compensat...

Radiation-Hardened Power Semiconductor Devices and Methods of Formi...

Super Junction Semiconductor Device Comprising a Cell Area and an E...

LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION

SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT

LATERAL SEMICONDUCTOR COMPONENT WITH A DRIFT ZONE HAVING AT LEAST O...

Lateral MISFET and method for fabricating it

Lateral trench transistor, as well as a method for its production

Lateral semiconductor component with a drift zone having at least o...

Semiconductor component with enhanced avalanche resistance

Compensation component and process for producing the component