Marnix Tack

Person

Merelbeke, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Enhancement mode MISHEMT with GaN channel regrowth under a gate area
- Patent number 11,335,798
- Issue date May 17, 2022
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including an access region
- Patent number 10,797,152
- Issue date Oct 6, 2020
- Semiconductor Components Industries, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including an access region
- Patent number 10,797,153
- Issue date Oct 6, 2020
- Semiconductor Components Industries, LLC
- Abhishek Banerjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a HEMT with a segmented gate electrode
- Patent number 9,929,261
- Issue date Mar 27, 2018
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and a transistor including a trench and a sidewal...
- Patent number 8,648,398
- Issue date Feb 11, 2014
- Semiconductor Components Industries, LLC
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a trench and a co...
- Patent number 8,298,889
- Issue date Oct 30, 2012
- Semiconductor Components Industries, LLC
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment of trench for MOS
- Patent number 7,989,886
- Issue date Aug 2, 2011
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double trench for isolation of semiconductor devices
- Patent number 7,915,155
- Issue date Mar 29, 2011
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved breakdown properties and manufac...
- Patent number 7,709,889
- Issue date May 4, 2010
- Semiconductor Components Industries, LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double trench for isolation of semiconductor devices
- Patent number 7,667,270
- Issue date Feb 23, 2010
- Semiconductor Components Industries LLC
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment of trench for MOS
- Patent number 7,608,510
- Issue date Oct 27, 2009
- AMI Semiconductor Belgium BVBA
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCEMENT MODE MISHEMT WITH GAN CHANNEL REGROWTH UNDER A GATE AREA
- Publication number 20210210627
- Publication date Jul 8, 2021
- Semiconductor Components Industries, LLC
- Peter MOENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION
- Publication number 20200006521
- Publication date Jan 2, 2020
- Semiconductor Components Industries, LLC
- Abhishek BANERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING AN ACCESS REGION AND A PROCESS OF FORMI...
- Publication number 20190371909
- Publication date Dec 5, 2019
- Semiconductor Components Industries, LLC
- Abhishek BANERJEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A HEMT WITH A SEGMENTED GATE ELECTRODE...
- Publication number 20170294530
- Publication date Oct 12, 2017
- Semiconductor Components Industries, LLC
- Peter MOENS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE AND A TRANSISTOR INCLUDING A TRENCH AND A SIDEWAL...
- Publication number 20130020637
- Publication date Jan 24, 2013
- Juame Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THE...
- Publication number 20100140698
- Publication date Jun 10, 2010
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE TRENCH FOR ISOLATION OF SEMICONDUCTOR DEVICES
- Publication number 20100105188
- Publication date Apr 29, 2010
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALIGNMENT OF TRENCH FOR MOS
- Publication number 20100065908
- Publication date Mar 18, 2010
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED BREAKDOWN PROPERTIES AND MANUFAC...
- Publication number 20090014785
- Publication date Jan 15, 2009
- AMI Semiconductor Belgium BVBA
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alignment of trench for MOS
- Publication number 20060249786
- Publication date Nov 9, 2006
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Double trench for isolation of semiconductor devices
- Publication number 20060244029
- Publication date Nov 2, 2006
- Peter Moens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multirate circular buffer and method of operating the same
- Publication number 20040018704
- Publication date Jan 29, 2004
- Paul Frans Marie Colson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure and method for processing such a structure
- Publication number 20040018705
- Publication date Jan 29, 2004
- Paul Frans Marie Colson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of processing a high voltage p++/n-well junction and a devic...
- Publication number 20020070411
- Publication date Jun 13, 2002
- ALCATEL
- Miguel Vermandel
- H01 - BASIC ELECTRIC ELEMENTS

Marnix Tack

Person

Patents Grantslast 30 patents

Enhancement mode MISHEMT with GaN channel regrowth under a gate area

Process of forming an electronic device including an access region

Process of forming an electronic device including an access region

Electronic device including a HEMT with a segmented gate electrode

Electronic device and a transistor including a trench and a sidewal...

Process of forming an electronic device including a trench and a co...

Alignment of trench for MOS

Double trench for isolation of semiconductor devices

Semiconductor device with improved breakdown properties and manufac...

Double trench for isolation of semiconductor devices

Alignment of trench for MOS

Patents Applicationslast 30 patents

ENHANCEMENT MODE MISHEMT WITH GAN CHANNEL REGROWTH UNDER A GATE AREA

PROCESS OF FORMING AN ELECTRONIC DEVICE INCLUDING AN ACCESS REGION

ELECTRONIC DEVICE INCLUDING AN ACCESS REGION AND A PROCESS OF FORMI...

ELECTRONIC DEVICE INCLUDING A HEMT WITH A SEGMENTED GATE ELECTRODE...

ELECTRONIC DEVICE AND A TRANSISTOR INCLUDING A TRENCH AND A SIDEWAL...

ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THE...

DOUBLE TRENCH FOR ISOLATION OF SEMICONDUCTOR DEVICES

ALIGNMENT OF TRENCH FOR MOS

SEMICONDUCTOR DEVICE WITH IMPROVED BREAKDOWN PROPERTIES AND MANUFAC...

Alignment of trench for MOS

Double trench for isolation of semiconductor devices

Multirate circular buffer and method of operating the same

Semiconductor structure and method for processing such a structure

Method of processing a high voltage p++/n-well junction and a devic...