Martin Domeij

Person

SOLLENTUNA, SE

People

Patents Grantslast 30 patents

Information Patent Grant
Termination structures with reduced dynamic output capacitance loss
- Patent number 11,817,478
- Issue date Nov 14, 2023
- Semiconductor Components Industries, LLC
- Jaume Roig-Guitart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit performance for silicon carbide semiconductor device
- Patent number 10,749,002
- Issue date Aug 18, 2020
- Semiconductor Components Industries, LLC
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short-circuit performance for silicon carbide semiconductor device
- Patent number 10,504,995
- Issue date Dec 10, 2019
- Semiconductor Components Industries, LLC
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide (SiC) device with improved gate dielectric shielding
- Patent number 10,453,950
- Issue date Oct 22, 2019
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide (SiC) device with improved gate dielectric shielding
- Patent number 9,685,550
- Issue date Jun 20, 2017
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC bipolar junction transistor with reduced carrier lifetime in co...
- Patent number 9,590,047
- Issue date Mar 7, 2017
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity modulation in a silicon carbide bipolar junction trans...
- Patent number 9,478,629
- Issue date Oct 25, 2016
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor in silicon carbide with improved breakd...
- Patent number 8,907,351
- Issue date Dec 9, 2014
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide bipolar junction transistor (BJT) having a surface...
- Patent number 8,853,827
- Issue date Oct 7, 2014
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 8,829,533
- Issue date Sep 9, 2014
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide bipolar junction transistor (BJT) having a surface...
- Patent number 8,378,390
- Issue date Feb 19, 2013
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...
- Publication number 20240178269
- Publication date May 30, 2024
- Semiconductor Components Industries, LLC
- Jimmy Robert Hannes FRANCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRENCH POWER DEVICE
- Publication number 20230378273
- Publication date Nov 23, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Kwangwon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CHANNEL SEMICONDUCTOR DEVICES AND RELATED METHODS
- Publication number 20230282693
- Publication date Sep 7, 2023
- Semiconductor Components Industries, LLC
- Kwangwon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION STRUCTURES WITH REDUCED DYNAMIC OUTPUT CAPACITANCE LOSS
- Publication number 20220199764
- Publication date Jun 23, 2022
- Semiconductor Components Industries, LLC
- Jaume ROIG-GUITART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRENCH POWER DEVICE
- Publication number 20210050420
- Publication date Feb 18, 2021
- Semiconductor Components Industries, LLC
- Kwangwon LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20200083331
- Publication date Mar 12, 2020
- Semiconductor Components Industries, LLC
- Martin DOMEIJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING
- Publication number 20170288048
- Publication date Oct 5, 2017
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING
- Publication number 20160190300
- Publication date Jun 30, 2016
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR IN SILICON CARBIDE WITH IMPROVED BREAKD...
- Publication number 20140054612
- Publication date Feb 27, 2014
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVITY MODULATION IN A SILICON CARBIDE BIPOLAR JUNCTION TRANS...
- Publication number 20130187173
- Publication date Jul 25, 2013
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR
- Publication number 20130126910
- Publication date May 23, 2013
- Fairchild Semiconductor Corporation
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR
- Publication number 20120007103
- Publication date Jan 12, 2012
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20100117097
- Publication date May 13, 2010
- Martin Domeij
- H01 - BASIC ELECTRIC ELEMENTS

Martin Domeij

Person

Patents Grantslast 30 patents

Termination structures with reduced dynamic output capacitance loss

Short-circuit performance for silicon carbide semiconductor device

Short-circuit performance for silicon carbide semiconductor device

Silicon carbide (SiC) device with improved gate dielectric shielding

Silicon carbide (SiC) device with improved gate dielectric shielding

SiC bipolar junction transistor with reduced carrier lifetime in co...

Conductivity modulation in a silicon carbide bipolar junction trans...

Bipolar junction transistor in silicon carbide with improved breakd...

Silicon carbide bipolar junction transistor (BJT) having a surface...

Silicon carbide semiconductor device

Silicon carbide bipolar junction transistor (BJT) having a surface...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DE...

SILICON CARBIDE TRENCH POWER DEVICE

TRENCH CHANNEL SEMICONDUCTOR DEVICES AND RELATED METHODS

TERMINATION STRUCTURES WITH REDUCED DYNAMIC OUTPUT CAPACITANCE LOSS

SILICON CARBIDE TRENCH POWER DEVICE

SHORT-CIRCUIT PERFORMANCE FOR SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING

SILICON CARBIDE (SiC) DEVICE WITH IMPROVED GATE DIELECTRIC SHIELDING

BIPOLAR JUNCTION TRANSISTOR IN SILICON CARBIDE WITH IMPROVED BREAKD...

CONDUCTIVITY MODULATION IN A SILICON CARBIDE BIPOLAR JUNCTION TRANS...

SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR

SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR

SILICON CARBIDE SEMICONDUCTOR DEVICE