Martin Gall

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Wappinger Falls, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Memory cell for dynamic random access memory (DRAM)
- Patent number 6,383,864
- Issue date May 7, 2002
- Siemens Aktiengesellschaft
- Gerd Scheller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with asymmetrical channel dopant profile
- Patent number 6,355,954
- Issue date Mar 12, 2002
- Siemens Aktiengesellscahft
- Martin Gall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of gate-induced drain leakage in semiconductor devices
- Patent number 6,090,671
- Issue date Jul 18, 2000
- Siemens Aktiengesellschaft
- Karanam Balasubramanyam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with asymmetrical channel dopant profile
- Patent number 6,025,224
- Issue date Feb 15, 2000
- Siemens Aktiengesellschaft
- Martin Gall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unit cell layout and transfer gate design for high density DRAMs
- Patent number 6,004,844
- Issue date Dec 21, 1999
- Siemens Aktiengesellschaft
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unit cell layout and transfer gate design for high density DRAMs ha...
- Patent number 5,936,271
- Issue date Aug 10, 1999
- Siemens Aktiengesellschaft
- Johann Alsmeier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELL FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM)
- Publication number 20020001900
- Publication date Jan 3, 2002
- GERD SCHELLER
- H01 - BASIC ELECTRIC ELEMENTS