Martin Poelzl

Person

Ossiach, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 12,119,400
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package and methods of manufacturing a semiconductor...
- Patent number 12,087,717
- Issue date Sep 10, 2024
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device and electronic component
- Patent number 11,848,237
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an alignment layer with mask pits
- Patent number 11,699,725
- Issue date Jul 11, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metallization structure on opposite sides...
- Patent number 11,552,016
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,316,043
- Issue date Apr 26, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device and electronic component
- Patent number 11,302,579
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package and methods of manufacturing a semiconductor...
- Patent number 11,081,457
- Issue date Aug 3, 2021
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having body contacts with dielectric spacers a...
- Patent number 11,031,478
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a rectifier element between a field electrod...
- Patent number 10,991,812
- Issue date Apr 27, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metallization structure on opposite sides...
- Patent number 10,971,449
- Issue date Apr 6, 2021
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 10,903,321
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices with oxygen inserted Si-layers
- Patent number 10,868,172
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite wafer, semiconductor device, electronic component and met...
- Patent number 10,672,664
- Issue date Jun 2, 2020
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metallization structure on opposite sides...
- Patent number 10,593,623
- Issue date Mar 17, 2020
- Infineon Technologies AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced contact implant outdiffusion...
- Patent number 10,580,888
- Issue date Mar 3, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench device with oxygen inserted si-layers
- Patent number 10,510,836
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a transistor with a gate dielectric...
- Patent number 10,355,087
- Issue date Jul 16, 2019
- Infineon Technologies AG
- Martin Vielemeyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a trench gate electrode
- Patent number 10,304,935
- Issue date May 28, 2019
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,249,723
- Issue date Apr 2, 2019
- Infineon Technologies Austria AG
- Heimo Hofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 10,181,511
- Issue date Jan 15, 2019
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with transistor cells...
- Patent number 10,121,859
- Issue date Nov 6, 2018
- Infineon Technologies AG
- Ravi Keshav Joshi
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device having field plate structures, source regions...
- Patent number 10,068,975
- Issue date Sep 4, 2018
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor chip with integrated series resistances
- Patent number 10,068,848
- Issue date Sep 4, 2018
- Infineon Technologies Austria AG
- Gerhard Noebauer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE
- Publication number 20240194754
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Weichun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20220231163
- Publication date Jul 21, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device and Electronic Component
- Publication number 20220181211
- Publication date Jun 9, 2022
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Die and Method of Manufacturing the Same
- Publication number 20220102547
- Publication date Mar 31, 2022
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING A SEMICONDUCTOR...
- Publication number 20210335739
- Publication date Oct 28, 2021
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...
- Publication number 20210273067
- Publication date Sep 2, 2021
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METALLIZATION STRUCTURE ON OPPOSITE SIDES...
- Publication number 20210183763
- Publication date Jun 17, 2021
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having an Alignment Layer with Mask Pits
- Publication number 20210098580
- Publication date Apr 1, 2021
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device and Electronic Component
- Publication number 20200273750
- Publication date Aug 27, 2020
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20200203525
- Publication date Jun 25, 2020
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Metallization Structure on Opposite Sides...
- Publication number 20200126904
- Publication date Apr 23, 2020
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127134
- Publication date Apr 23, 2020
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...
- Publication number 20200052109
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package and Methods of Manufacturing a Semiconductor...
- Publication number 20190267362
- Publication date Aug 29, 2019
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Body Contacts with Dielectric Spacers a...
- Publication number 20190229198
- Publication date Jul 25, 2019
- Infineon Technologies Austria AG
- Wei-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Wafer, Semiconductor Device, Electronic Component and Met...
- Publication number 20190088550
- Publication date Mar 21, 2019
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Rectifier Element Between a Field Electrod...
- Publication number 20190035915
- Publication date Jan 31, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Controlling the Reflow Behaviour of BPSG Films and Devices Made The...
- Publication number 20180247820
- Publication date Aug 30, 2018
- Infineon Technologies Austria AG
- Juergen Steinbrenner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Metallization Structure on Opposite Sides...
- Publication number 20180138120
- Publication date May 17, 2018
- INFINEON TECHNOLOGIES AG
- Paul Ganitzer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20180138278
- Publication date May 17, 2018
- Infineon Technologies Austria AG
- Heimo Hofer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Trench Gate Electrode
- Publication number 20170330946
- Publication date Nov 16, 2017
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Devices with Transistor Cells...
- Publication number 20170271446
- Publication date Sep 21, 2017
- INFINEON TECHNOLOGIES AG
- Ravi Keshav Joshi
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
Semiconductor Device Having Field Plate Structures, Source Regions...
- Publication number 20170256619
- Publication date Sep 7, 2017
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Processing a Semiconductor Device
- Publication number 20170236913
- Publication date Aug 17, 2017
- Infineon Technologies Austria AG
- Heimo Hofer
- H01 - BASIC ELECTRIC ELEMENTS

Martin Poelzl

Person

Patents Grantslast 30 patents

Semiconductor transistor device and method of manufacturing the same

Semiconductor package and methods of manufacturing a semiconductor...

Composite wafer, semiconductor device and electronic component

Semiconductor device having an alignment layer with mask pits

Semiconductor device with metallization structure on opposite sides...

Superjunction device with oxygen inserted Si-layers

Semiconductor transistor device and method of manufacturing the same

Composite wafer, semiconductor device and electronic component

Semiconductor package and methods of manufacturing a semiconductor...

Semiconductor device having body contacts with dielectric spacers a...

Method of forming oxygen inserted Si-layers in power semiconductor...

Transistor device with a rectifier element between a field electrod...

Semiconductor device with metallization structure on opposite sides...

Semiconductor device and method of manufacturing a semiconductor de...

Vertical power devices with oxygen inserted Si-layers

Vertical trench power devices with oxygen inserted Si-layers

Semiconductor device with superjunction and oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

Composite wafer, semiconductor device, electronic component and met...

Semiconductor device with metallization structure on opposite sides...

Oxygen inserted Si-layers for reduced contact implant outdiffusion...

Oxygen inserted Si-layers in vertical trench power devices

Gate trench device with oxygen inserted si-layers

Semiconductor device including a transistor with a gate dielectric...

Semiconductor device having a trench gate electrode

Semiconductor device

Semiconductor device and method of manufacturing a semiconductor de...

Method of manufacturing semiconductor devices with transistor cells...

Semiconductor device having field plate structures, source regions...

Semiconductor chip with integrated series resistances

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND CORRESPONDING METHODS OF MANUFACTURE

Semiconductor Transistor Device and Method of Manufacturing the Same

Composite Wafer, Semiconductor Device and Electronic Component

Semiconductor Die and Method of Manufacturing the Same

SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING A SEMICONDUCTOR...

SEMICONDUCTOR DEVICE HAVING BODY CONTACT REGIONS AND CORRESPONDING...

SEMICONDUCTOR DEVICE WITH METALLIZATION STRUCTURE ON OPPOSITE SIDES...

Semiconductor Device Having an Alignment Layer with Mask Pits

Superjunction Device with Oxygen Inserted Si-Layers

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

Composite Wafer, Semiconductor Device and Electronic Component

Semiconductor Transistor Device and Method of Manufacturing the Same

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Semiconductor Device with Metallization Structure on Opposite Sides...

Vertical Power Devices with Oxygen Inserted Si-Layers

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

Semiconductor Package and Methods of Manufacturing a Semiconductor...

Semiconductor Device Having Body Contacts with Dielectric Spacers a...

Composite Wafer, Semiconductor Device, Electronic Component and Met...

Transistor Device with a Rectifier Element Between a Field Electrod...

Controlling the Reflow Behaviour of BPSG Films and Devices Made The...

Semiconductor Device with Metallization Structure on Opposite Sides...

Semiconductor Device

Semiconductor Device Having a Trench Gate Electrode

Method of Manufacturing Semiconductor Devices with Transistor Cells...

Semiconductor Device Having Field Plate Structures, Source Regions...

Method of Processing a Semiconductor Device