Martin Revitz

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making heterojunction bipolar transistor with self-align...
- Patent number 5,656,514
- Issue date Aug 12, 1997
- International Business Machines Corporation
- David Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a doped region in a semiconductor substrate utili...
- Patent number 5,385,850
- Issue date Jan 31, 1995
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow base transistor and method of fabricating same
- Patent number 5,132,765
- Issue date Jul 21, 1992
- Jeffrey L. Blouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a narrow base transistor
- Patent number 5,008,207
- Issue date Apr 16, 1991
- International Business Machines Corporation
- Jeffrey L. Blouse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a bipolar transistor
- Patent number 4,701,998
- Issue date Oct 27, 1987
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for passivating an undercut in semiconductor device preparation
- Patent number 4,667,395
- Issue date May 26, 1987
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double polysilicon contact structure
- Patent number 4,437,108
- Issue date Mar 13, 1984
- International Business Machines Corporation
- James R. Gardiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double polysilicon contact structure and process
- Patent number 4,394,406
- Issue date Jul 19, 1983
- International Business Machines Corp.
- James R Gardiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a metal-insulator-semiconductor device util...
- Patent number 4,354,309
- Issue date Oct 19, 1982
- International Business Machines Corp.
- James R. Gardiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an electrical contact to a silicon substrate thro...
- Patent number 4,341,009
- Issue date Jul 27, 1982
- International Business Machines Corporation
- Robert F. Bartholomew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a metal-insulator-semiconductor utilizing a...
- Patent number 4,249,968
- Issue date Feb 10, 1981
- International Business Machines Corporation
- James R. Gardiner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Making semiconductor structure with improved phosphosilicate glass...
- Patent number 4,191,603
- Issue date Mar 4, 1980
- International Business Machines Corporation
- Paul L. Garbarino
- H01 - BASIC ELECTRIC ELEMENTS

Martin Revitz

Person

Patents Grantslast 30 patents

Method for making heterojunction bipolar transistor with self-align...

Method of forming a doped region in a semiconductor substrate utili...

Narrow base transistor and method of fabricating same

Method of fabricating a narrow base transistor

Method for fabricating a bipolar transistor

Method for passivating an undercut in semiconductor device preparation

Double polysilicon contact structure

Double polysilicon contact structure and process

Method of manufacturing a metal-insulator-semiconductor device util...

Method for making an electrical contact to a silicon substrate thro...

Method of manufacturing a metal-insulator-semiconductor utilizing a...

Making semiconductor structure with improved phosphosilicate glass...