Martin Trentzsch

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Ferro-FET device with buried buffer/ferroelectric layer stack
- Patent number 10,163,933
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NVM device in SOI technology and method of fabricating an according...
- Patent number 10,084,057
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating integrated circuits with isolation regions...
- Patent number 9,508,588
- Issue date Nov 29, 2016
- GLOBALFOUNDRIES, INC.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with field-inducing structure
- Patent number 9,236,482
- Issue date Jan 12, 2016
- GLOBALFOUNDRIES Inc.
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET method comprising high-K dielectric
- Patent number 9,064,900
- Issue date Jun 23, 2015
- GLOBALFOUNDRIES Inc.
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a material layer in a semiconductor structure
- Patent number 8,993,459
- Issue date Mar 31, 2015
- GLOBALFOUNDRIES Inc.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate structure for semiconductor devices
- Patent number 8,872,285
- Issue date Oct 28, 2014
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor resistor including a dielectric layer including a spe...
- Patent number 8,823,138
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Inc.
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CET and gate current leakage reduction in high-k metal gate electro...
- Patent number 8,735,240
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Torben Kelwing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting of a non-silicon fraction in a semiconductor alloy during...
- Patent number 8,735,253
- Issue date May 27, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivating point defects in high-K gate dielectric layers during g...
- Patent number 8,658,490
- Issue date Feb 25, 2014
- GLOBALFOUNDRIES Inc.
- Elke Erben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing interface characteristics between a channel semiconductor...
- Patent number 8,609,482
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting threshold voltage for sophisticated transistors by diffus...
- Patent number 8,525,289
- Issue date Sep 3, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing uniformity of a channel semiconductor alloy by forming ST...
- Patent number 8,486,786
- Issue date Jul 16, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform high-k metal gate stacks by adjusting threshold voltage for...
- Patent number 8,445,344
- Issue date May 21, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining integrity of a high-K gate stack by an offset spacer us...
- Patent number 8,378,432
- Issue date Feb 19, 2013
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Work function adjustment in high-k gate stacks including gate diele...
- Patent number 8,349,695
- Issue date Jan 8, 2013
- GLOBALFOUNDRIES, INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a metal gate stack of reduced heigh...
- Patent number 8,293,610
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing interface characteristics between a channel semiconductor...
- Patent number 8,247,282
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting threshold voltage for sophisticated transistors by diffus...
- Patent number 8,198,192
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES Inc.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ monitoring of metal contamination during microstructure pro...
- Patent number 8,158,065
- Issue date Apr 17, 2012
- Advanced Micro Devices, Inc.
- Martin Trentzsch
- G01 - MEASURING TESTING
Information Patent Grant
Reducing the creation of charge traps at gate dielectrics in MOS tr...
- Patent number 8,119,461
- Issue date Feb 21, 2012
- GLOBALFOUNDRIES Inc.
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of enhancing lithography capabilities during gate formation...
- Patent number 8,101,512
- Issue date Jan 24, 2012
- GLOBALFOUNDRIES Inc.
- Martin Gerhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming CMOS device having gate insulation layers of diff...
- Patent number 8,021,942
- Issue date Sep 20, 2011
- GLOBALFOUNDRIES Inc.
- Andy Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gate dielectrics of different thickness in PMOS and NMOS transistors
- Patent number 7,994,037
- Issue date Aug 9, 2011
- Advanced Micro Devices, Inc.
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for locally adapting transistor characteristics by using...
- Patent number 7,745,334
- Issue date Jun 29, 2010
- Advanced Micro Devices, Inc.
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM AND METHOD FOR STATUS-DEPENDENT CONTROLLING OF A SUBSTRATE A...
- Publication number 20180269081
- Publication date Sep 20, 2018
- GLOBALFOUNDRIES INC.
- Boris Bayha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NVM DEVICE IN SOI TECHNOLOGY AND METHOD OF FABRICATING AN ACCORDING...
- Publication number 20180053832
- Publication date Feb 22, 2018
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH ISOLATION REGIONS...
- Publication number 20160126132
- Publication date May 5, 2016
- GLOBALFOUNDRIES, Inc.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD-INDUCING STRUCTURE
- Publication number 20150243789
- Publication date Aug 27, 2015
- GLOBALFOUNDRIES INC.
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH STRAINED LAYER
- Publication number 20150179740
- Publication date Jun 25, 2015
- GLOBAL FOUNDRIES Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING A SEMICONDUCT...
- Publication number 20150008536
- Publication date Jan 8, 2015
- GLOBALFOUNDRIES INC.
- Matthias Goldbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...
- Publication number 20140264626
- Publication date Sep 18, 2014
- GLOBALFOUNDRIES INC.
- Ran Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE STRUCTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20140246735
- Publication date Sep 4, 2014
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MATERIAL LAYER IN A SEMICONDUCTOR STRUCTURE
- Publication number 20140065808
- Publication date Mar 6, 2014
- GLOBALFOUNDRIES INC.
- Carsten Grass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRO...
- Publication number 20130288435
- Publication date Oct 31, 2013
- GLOBALFOUNDRIES INC.
- Torben Kelwing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DEVICE RELIABILITY OF A SEMICONDUCTOR DEVICE BY PROVIDING...
- Publication number 20130280873
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Elke Erben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR
- Publication number 20130277766
- Publication date Oct 24, 2013
- GLOBALFOUNDRIES INC.
- Torben Kelwing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATING POINT DEFECTS IN HIGH-K GATE DIELECTRIC LAYERS DURING G...
- Publication number 20130267086
- Publication date Oct 10, 2013
- GLOBALFOUNDRIES INC.
- Elke Erben
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Patterning of Sensitive Metal-Containing Layers With Superior Mask...
- Publication number 20130126984
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Berthold Reimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...
- Publication number 20120282760
- Publication date Nov 8, 2012
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...
- Publication number 20120193727
- Publication date Aug 2, 2012
- GLOBALFOUNDRIES INC.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...
- Publication number 20110129970
- Publication date Jun 2, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORK FUNCTION ADJUSTMENT IN HIGH-K GATE STACKS INCLUDING GATE DIELE...
- Publication number 20110049642
- Publication date Mar 3, 2011
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...
- Publication number 20110045665
- Publication date Feb 24, 2011
- GLOBALFOUNDRIES INC.
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...
- Publication number 20100327373
- Publication date Dec 30, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING ST...
- Publication number 20100289090
- Publication date Nov 18, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...
- Publication number 20100289089
- Publication date Nov 18, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY AN OFFSET SPACER US...
- Publication number 20100244155
- Publication date Sep 30, 2010
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF A NON-SILICON FRACTION IN A SEMICONDUCTOR ALLOY DURING...
- Publication number 20100221883
- Publication date Sep 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU MONITORING OF METAL CONTAMINATION DURING MICROSTRUCTURE PRO...
- Publication number 20100077839
- Publication date Apr 1, 2010
- Martin Trentzsch
- G01 - MEASURING TESTING
Information Patent Application
GATE DIELECTRICS OF DIFFERENT THICKNESS IN PMOS AND NMOS TRANSISTORS
- Publication number 20100025770
- Publication date Feb 4, 2010
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A METAL GATE STACK OF REDUCED HEIGH...
- Publication number 20090218639
- Publication date Sep 3, 2009
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...
- Publication number 20090170339
- Publication date Jul 2, 2009
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE HAVING GATE INSULATION LAYERS OF DIFFERENT TYPE AND THI...
- Publication number 20090057769
- Publication date Mar 5, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...
- Publication number 20080081471
- Publication date Apr 3, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS

Martin Trentzsch

Person

Patents Grantslast 30 patents

Ferro-FET device with buried buffer/ferroelectric layer stack

NVM device in SOI technology and method of fabricating an according...

Methods for fabricating integrated circuits with isolation regions...

Semiconductor device with field-inducing structure

FinFET method comprising high-K dielectric

Method of forming a material layer in a semiconductor structure

Metal gate structure for semiconductor devices

Semiconductor resistor including a dielectric layer including a spe...

CET and gate current leakage reduction in high-k metal gate electro...

Adjusting of a non-silicon fraction in a semiconductor alloy during...

Passivating point defects in high-K gate dielectric layers during g...

Enhancing interface characteristics between a channel semiconductor...

Adjusting threshold voltage for sophisticated transistors by diffus...

Enhancing uniformity of a channel semiconductor alloy by forming ST...

Uniform high-k metal gate stacks by adjusting threshold voltage for...

Maintaining integrity of a high-K gate stack by an offset spacer us...

Work function adjustment in high-k gate stacks including gate diele...

Semiconductor device comprising a metal gate stack of reduced heigh...

Enhancing interface characteristics between a channel semiconductor...

Adjusting threshold voltage for sophisticated transistors by diffus...

In situ monitoring of metal contamination during microstructure pro...

Reducing the creation of charge traps at gate dielectrics in MOS tr...

Method of enhancing lithography capabilities during gate formation...

Method of forming CMOS device having gate insulation layers of diff...

Gate dielectrics of different thickness in PMOS and NMOS transistors

Technique for locally adapting transistor characteristics by using...

Patents Applicationslast 30 patents

SYSTEM AND METHOD FOR STATUS-DEPENDENT CONTROLLING OF A SUBSTRATE A...

NVM DEVICE IN SOI TECHNOLOGY AND METHOD OF FABRICATING AN ACCORDING...

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH ISOLATION REGIONS...

SEMICONDUCTOR DEVICE WITH FIELD-INDUCING STRUCTURE

TRANSISTOR DEVICE WITH STRAINED LAYER

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING A SEMICONDUCT...

METHOD FOR FORMING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE, GATE...

METAL GATE STRUCTURE FOR SEMICONDUCTOR DEVICES

METHOD OF FORMING A MATERIAL LAYER IN A SEMICONDUCTOR STRUCTURE

CET AND GATE CURRENT LEAKAGE REDUCTION IN HIGH-K METAL GATE ELECTRO...

ENHANCED DEVICE RELIABILITY OF A SEMICONDUCTOR DEVICE BY PROVIDING...

MULTIPLE HIGH-K METAL GATE STACKS IN A FIELD EFFECT TRANSISTOR

PASSIVATING POINT DEFECTS IN HIGH-K GATE DIELECTRIC LAYERS DURING G...

Patterning of Sensitive Metal-Containing Layers With Superior Mask...

ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...

ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...

ENHANCING INTERFACE CHARACTERISTICS BETWEEN A CHANNEL SEMICONDUCTOR...

WORK FUNCTION ADJUSTMENT IN HIGH-K GATE STACKS INCLUDING GATE DIELE...

REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...

UNIFORM HIGH-K METAL GATE STACKS BY ADJUSTING THRESHOLD VOLTAGE FOR...

ENHANCING UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING ST...

ADJUSTING THRESHOLD VOLTAGE FOR SOPHISTICATED TRANSISTORS BY DIFFUS...

MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY AN OFFSET SPACER US...

ADJUSTING OF A NON-SILICON FRACTION IN A SEMICONDUCTOR ALLOY DURING...

IN SITU MONITORING OF METAL CONTAMINATION DURING MICROSTRUCTURE PRO...

GATE DIELECTRICS OF DIFFERENT THICKNESS IN PMOS AND NMOS TRANSISTORS

SEMICONDUCTOR DEVICE COMPRISING A METAL GATE STACK OF REDUCED HEIGH...

REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...

CMOS DEVICE HAVING GATE INSULATION LAYERS OF DIFFERENT TYPE AND THI...

TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...