Masaaki Aoyama

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Kasugai-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Dry etching with reduced damage to MOS device
- Patent number 6,884,670
- Issue date Apr 26, 2005
- Fujitsu Limited
- Koichi Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate insulation film resistant to die...
- Patent number 6,559,485
- Issue date May 6, 2003
- Fujitsu Limited
- Masaaki Aoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching with reduced damage to MOS device
- Patent number 6,376,388
- Issue date Apr 23, 2002
- Fujitsu Limited
- Koichi Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method including ashing process
- Patent number 6,044,850
- Issue date Apr 4, 2000
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dry etching with reduced damage to MOS device
- Publication number 20020094625
- Publication date Jul 18, 2002
- FUJITSU LIMITED
- Koichi Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A GATE INSULATION FILM RESISTANT TO DIE...
- Publication number 20020000579
- Publication date Jan 3, 2002
- FUJITSU LIMITED
- Masaaki Aoyama
- H01 - BASIC ELECTRIC ELEMENTS