Masaaki Kanayama

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Tsuchiura, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of making a gallium arsenide phosphide-, mixed crystal-epita...
- Patent number 4,968,642
- Issue date Nov 6, 1990
- Mitsubishi Chemical Industries, Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium arsenide phosphide mixed crystal epitaxial wafer with a gra...
- Patent number 4,865,655
- Issue date Sep 12, 1989
- Mitsubishi Monsanto Chemical Co., Ltd.
- Hisanori Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for vapor-phase epitaxial growth of a single crystalline-, g...
- Patent number 4,756,792
- Issue date Jul 12, 1988
- Mitsubishi Monsanto Chemical Co., Ltd.
- Hisanori Fujita
- C30 - CRYSTAL GROWTH