Masaaki Koizuka

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Kawasaki, JP

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Patents Grantslast 30 patents

Information Patent Grant
Selective epitaxial growth method using halogen containing gate sid...
- Patent number 8,497,191
- Issue date Jul 30, 2013
- Fujitsu Semiconductor Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated by selective epitaxial growth method
- Patent number 7,679,147
- Issue date Mar 16, 2010
- Fujitsu Microelectronics Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabricated by selective epitaxial growth method
- Patent number 7,446,394
- Issue date Nov 4, 2008
- Fujitsu Limited
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low hydrogen-content silicon crystal with few micro-defects caused...
- Patent number 5,641,353
- Issue date Jun 24, 1997
- Fujitsu Limited
- Akito Hara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low hydrogen-content silicon crystal with few micro-defects caused...
- Patent number 5,505,157
- Issue date Apr 9, 1996
- Fujitsu Limited
- Akito Hara
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device fabricated by selective epitaxial growth method
- Publication number 20090117715
- Publication date May 7, 2009
- FUJITSU LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device fabricated by selective epitaxial growth method
- Publication number 20090045471
- Publication date Feb 19, 2009
- FUJITSU LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070200203
- Publication date Aug 30, 2007
- FUJITSU LIMITED
- Masahiro Fukuda
- H01 - BASIC ELECTRIC ELEMENTS