Masaaki Kuzuhara

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field-effect transistor having group III nitride electrode structure
- Patent number 7,973,335
- Issue date Jul 5, 2011
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,859,014
- Issue date Dec 28, 2010
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode, method for producing same and semiconductor device using...
- Patent number 7,615,868
- Issue date Nov 10, 2009
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode structure of nitride semiconductor device
- Patent number 7,459,788
- Issue date Dec 2, 2008
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode, method for producing same and semiconductor device using...
- Patent number 7,323,783
- Issue date Jan 29, 2008
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor
- Patent number 7,256,432
- Issue date Aug 14, 2007
- NEC Corporation
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having Schottky junction electrode
- Patent number 7,071,526
- Issue date Jul 4, 2006
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor device of field effect transistor t...
- Patent number 6,765,241
- Issue date Jul 20, 2004
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor having an intermediate layer
- Patent number 6,552,373
- Issue date Apr 22, 2003
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor field effect transistor
- Patent number 6,534,790
- Issue date Mar 18, 2003
- NEC Corporation
- Takehiko Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with schottky electrode having high schottky b...
- Patent number 6,492,669
- Issue date Dec 10, 2002
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 6,483,135
- Issue date Nov 19, 2002
- NEC Compound Semiconductor Devices, Ltd.
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,465,814
- Issue date Oct 15, 2002
- NEC Corporation
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having drain and gate electrodes formed to lie...
- Patent number 6,441,391
- Issue date Aug 27, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device with sidewall metal la...
- Patent number 6,440,822
- Issue date Aug 27, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction field effect transistor
- Patent number 6,255,673
- Issue date Jul 3, 2001
- NEC Corporation
- Masaaki Kuzuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fet having non-overlapping field control electrode between gate and...
- Patent number 6,100,571
- Issue date Aug 8, 2000
- NEC Corporation
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a graded bandgap InGaAsP channel for...
- Patent number 5,596,211
- Issue date Jan 21, 1997
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 5,504,353
- Issue date Apr 2, 1996
- NEC Corporation
- Masaaki Kuzuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an improved transistor characteristic
- Patent number 5,466,955
- Issue date Nov 14, 1995
- NEC Corporation
- Kenichi Maruhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having a multi-layer channel
- Patent number 5,453,631
- Issue date Sep 26, 1995
- NEC Corporation
- Kazuhiko Onda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional electron gas field effect transistor including an i...
- Patent number 5,373,168
- Issue date Dec 13, 1994
- NEC Corporation
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High speed non-volatile programmable read only memory device fabric...
- Patent number 5,272,372
- Issue date Dec 21, 1993
- NEC Corporation
- Masaaki Kuzuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi one-dimensional electron gas field effect transistor
- Patent number 5,138,405
- Issue date Aug 11, 1992
- NEC Corporation
- Masaaki Kuzuhara
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Electrode, method for producing same and semiconductor device using...
- Publication number 20080179743
- Publication date Jul 31, 2008
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Electrode of Nitride Semiconductor Device and Process for...
- Publication number 20080006853
- Publication date Jan 10, 2008
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20070164326
- Publication date Jul 19, 2007
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ohmic electrode structure of nitride semiconductor device
- Publication number 20070164305
- Publication date Jul 19, 2007
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070158692
- Publication date Jul 12, 2007
- NEC Corporation
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode, method for producing same and semiconductor device using...
- Publication number 20070018316
- Publication date Jan 25, 2007
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060054929
- Publication date Mar 16, 2006
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-effect transistor
- Publication number 20060043415
- Publication date Mar 2, 2006
- NEC CORPORATION
- Yasuhiro Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having schottky junction electrode
- Publication number 20050151255
- Publication date Jul 14, 2005
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030151064
- Publication date Aug 14, 2003
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20030006437
- Publication date Jan 9, 2003
- NEC Corporation
- Masashi Mizuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky gate field effect transistor with high output characteristic
- Publication number 20020171096
- Publication date Nov 21, 2002
- NEC Corporation
- Akio Wakejima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020047113
- Publication date Apr 25, 2002
- NEC Corporation
- Yasuo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device with sidewall metal la...
- Publication number 20020048889
- Publication date Apr 25, 2002
- NEC Corporation
- Nobuyuki Hayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020017648
- Publication date Feb 14, 2002
- Kensuke Kasahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with schottky electrode having high schottky b...
- Publication number 20020017696
- Publication date Feb 14, 2002
- Tatsuo Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction field effect transistor having an intermediate layer
- Publication number 20010040247
- Publication date Nov 15, 2001
- Yuji Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and manufacturing method thereof
- Publication number 20010019131
- Publication date Sep 6, 2001
- Takehiko Kato
- H01 - BASIC ELECTRIC ELEMENTS

Masaaki Kuzuhara

Person

Patents Grantslast 30 patents

Field-effect transistor having group III nitride electrode structure

Semiconductor device

Electrode, method for producing same and semiconductor device using...

Ohmic electrode structure of nitride semiconductor device

Electrode, method for producing same and semiconductor device using...

Field-effect transistor

Semiconductor device having Schottky junction electrode

Group III nitride semiconductor device of field effect transistor t...

Hetero-junction field effect transistor having an intermediate layer

Compound semiconductor field effect transistor

Semiconductor device with schottky electrode having high schottky b...

Field effect transistor

Semiconductor device

Semiconductor device having drain and gate electrodes formed to lie...

Method of manufacturing semiconductor device with sidewall metal la...

Hetero-junction field effect transistor

Fet having non-overlapping field control electrode between gate and...

Field effect transistor having a graded bandgap InGaAsP channel for...

Field effect transistor

Field effect transistor having an improved transistor characteristic

Field effect transistor having a multi-layer channel

Two-dimensional electron gas field effect transistor including an i...

High speed non-volatile programmable read only memory device fabric...

Quasi one-dimensional electron gas field effect transistor

Patents Applicationslast 30 patents

Electrode, method for producing same and semiconductor device using...

Schottky Electrode of Nitride Semiconductor Device and Process for...

Field effect transistor

Ohmic electrode structure of nitride semiconductor device

Semiconductor device

Electrode, method for producing same and semiconductor device using...

Semiconductor device

Field-effect transistor

Semiconductor device having schottky junction electrode

Semiconductor device

Field effect transistor

Schottky gate field effect transistor with high output characteristic

Semiconductor device

Method of manufacturing semiconductor device with sidewall metal la...

Semiconductor device

Semiconductor device with schottky electrode having high schottky b...

Hetero-junction field effect transistor having an intermediate layer

Field effect transistor and manufacturing method thereof