Masafumi Hamaguchi

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White Plains, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Strain preserving ion implantation methods
- Patent number 8,598,006
- Issue date Dec 3, 2013
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device on direct silicon bonded substrate with differ...
- Patent number 8,193,616
- Issue date Jun 5, 2012
- Kabushiki Kaisha Toshiba
- Masafumi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRIPLE OXIDATION ON DSB SUBSTRATE
- Publication number 20120080777
- Publication date Apr 5, 2012
- Toshiba America Electronic Components, Inc
- Masafumi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN-PRESERVING ION IMPLANTATION METHODS
- Publication number 20110230030
- Publication date Sep 22, 2011
- International Business Machines Corporation
- Joel P. de Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE ON DIRECT SILICON BONDED SUBSTRATE WITH DIFFER...
- Publication number 20100327395
- Publication date Dec 30, 2010
- Toshiba America Electronic Components, Inc
- Masafumi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED-CHANNEL FET COMPRISING TWIST-BONDED SEMICONDUCTOR LAYER
- Publication number 20090173967
- Publication date Jul 9, 2009
- International Business Machines Corporation
- Masafumi Hamaguchi
- H01 - BASIC ELECTRIC ELEMENTS