MASAHARU KOBAYASHI

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,417
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,711,416
- Issue date Jul 18, 2017
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistor including a strained epitaxial semicond...
- Patent number 9,391,171
- Issue date Jul 12, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formation using cold welding
- Patent number 9,087,905
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of Ge-containing fins and compound semiconductor fins
- Patent number 9,054,192
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process variability tolerant hard mask for replacement metal gate f...
- Patent number 9,034,748
- Issue date May 19, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 8,987,800
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Transistor formation using cold welding
- Patent number 8,941,147
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced short channel effect of III-V field effect transistor via o...
- Patent number 8,907,381
- Issue date Dec 9, 2014
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced short channel effect of III-V field effect transistor via o...
- Patent number 8,889,541
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Cheng-Wei Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for compound semiconductor contact
- Patent number 8,835,266
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Norma E. Sosa Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor material passivation with crystalline...
- Patent number 8,809,860
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor material passivation with crystalline...
- Patent number 8,524,614
- Issue date Sep 3, 2013
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322500
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20160322264
- Publication date Nov 3, 2016
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FORMATION USING COLD WELDING
- Publication number 20150311179
- Publication date Oct 29, 2015
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...
- Publication number 20150214364
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS
- Publication number 20150179739
- Publication date Jun 25, 2015
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...
- Publication number 20150064897
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Christopher V. Baiocco
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SHORT CHANNEL EFFECT OF III-V FIELD EFFECT TRANSISTOR VIA O...
- Publication number 20140332855
- Publication date Nov 13, 2014
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SHORT CHANNEL EFFECT OF III-V FIELD EFFECT TRANSISTOR VIA O...
- Publication number 20140332851
- Publication date Nov 13, 2014
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20140264522
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
TRANSISTOR FORMATION USING COLD WELDING
- Publication number 20140094006
- Publication date Apr 3, 2014
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FORMATION USING COLD WELDING
- Publication number 20140091370
- Publication date Apr 3, 2014
- International Business Machines Corporation
- CHENG-WEI CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V COMPOUND SEMICONDUCTOR MATERIAL PASSIVATION WITH CRYSTALLINE...
- Publication number 20130168834
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Structure For Compound Semiconductor Contact
- Publication number 20120261718
- Publication date Oct 18, 2012
- International Business Machines Corporation
- Norma E. Sosa Cortes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Compound Semiconductor Material Passivation With Crystalline...
- Publication number 20120132913
- Publication date May 31, 2012
- International Business Machines Corporation
- Kuen-Ting Shiu
- H01 - BASIC ELECTRIC ELEMENTS

MASAHARU KOBAYASHI

Person

Patents Grantslast 30 patents

Fin field effect transistor including a strained epitaxial semicond...

Fin field effect transistor including a strained epitaxial semicond...

Fin field effect transistor including a strained epitaxial semicond...

Transistor formation using cold welding

Integration of Ge-containing fins and compound semiconductor fins

Process variability tolerant hard mask for replacement metal gate f...

Semiconductor structures with deep trench capacitor and methods of...

Transistor formation using cold welding

Reduced short channel effect of III-V field effect transistor via o...

Reduced short channel effect of III-V field effect transistor via o...

Method and structure for compound semiconductor contact

III-V compound semiconductor material passivation with crystalline...

III-V compound semiconductor material passivation with crystalline...

Patents Applicationslast 30 patents

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

TRANSISTOR FORMATION USING COLD WELDING

FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICOND...

INTEGRATION OF GE-CONTAINING FINS AND COMPOUND SEMICONDUCTOR FINS

PROCESS VARIABILITY TOLERANT HARD MASK FOR REPLACEMENT METAL GATE F...

REDUCED SHORT CHANNEL EFFECT OF III-V FIELD EFFECT TRANSISTOR VIA O...

REDUCED SHORT CHANNEL EFFECT OF III-V FIELD EFFECT TRANSISTOR VIA O...

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

TRANSISTOR FORMATION USING COLD WELDING

TRANSISTOR FORMATION USING COLD WELDING

III-V COMPOUND SEMICONDUCTOR MATERIAL PASSIVATION WITH CRYSTALLINE...

Method And Structure For Compound Semiconductor Contact

III-V Compound Semiconductor Material Passivation With Crystalline...