Masahiko Doki

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a semiconductor device having planarized insulatin...
- Patent number 5,976,973
- Issue date Nov 2, 1999
- Fujitsu Ltd.
- Koichiro Ohira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming multilayer insulating film of semiconductor device
- Patent number 5,763,005
- Issue date Jun 9, 1998
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ cleaning of plasma treatment chamber
- Patent number 5,620,526
- Issue date Apr 15, 1997
- Fujitsu Limited
- Hirofumi Watatani
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multilayer insulating film of semiconductor device and method for f...
- Patent number 5,506,443
- Issue date Apr 9, 1996
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma process apparatus and plasma processing method
- Patent number 5,310,452
- Issue date May 10, 1994
- Fujitsu Limited
- Masahiko Doki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing insulating layer on underlying layer using pla...
- Patent number 5,231,057
- Issue date Jul 27, 1993
- Fujitsu Limited
- Masahiko Doki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming shallow junctions
- Patent number 5,183,777
- Issue date Feb 2, 1993
- Fujitsu Limited
- Masahiko Doki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma process apparatus and plasma processing method
- Patent number 5,160,397
- Issue date Nov 3, 1992
- Fujitsu Limited and Fuji Electric Co., Ltd.
- Masahiko Doki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide barrier between silicon substrate and metal layer
- Patent number 5,103,285
- Issue date Apr 7, 1992
- Fujitsu Limited
- Yuji Furumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma processing apparatus
- Patent number 4,891,118
- Issue date Jan 2, 1990
- Fuji Electric Co., Ltd.
- Kiyoshi Ooiwa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Masahiko Doki

Person

Patents Grantslast 30 patents

Method of making a semiconductor device having planarized insulatin...

Method for forming multilayer insulating film of semiconductor device

In-situ cleaning of plasma treatment chamber

Multilayer insulating film of semiconductor device and method for f...

Plasma process apparatus and plasma processing method

Method of depositing insulating layer on underlying layer using pla...

Method of forming shallow junctions

Plasma process apparatus and plasma processing method

Silicon carbide barrier between silicon substrate and metal layer

Plasma processing apparatus