Masahiko Nakamae

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing strained Si-SOI substrate and strained Si-SOI...
- Patent number 7,977,221
- Issue date Jul 12, 2011
- Sumco Corporation
- Masaharu Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor wafer including a strained s...
- Patent number 7,767,548
- Issue date Aug 3, 2010
- Sumco Corporation
- Masaharu Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pasted SOI substrate, process for producing the same and semiconduc...
- Patent number 7,253,082
- Issue date Aug 7, 2007
- Sumitomo Mitsubishi Silicon Corporation
- Naoshi Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
- Patent number 6,372,628
- Issue date Apr 16, 2002
- NEC Corporation
- Yoshihisa Matsubara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film comprising amorphous carbon fluoride, a semiconduct...
- Patent number 6,091,081
- Issue date Jul 18, 2000
- NEC Corporation
- Yoshihisa Matsubara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor having thin base region
- Patent number 5,296,391
- Issue date Mar 22, 1994
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having bipolar transistor with trench
- Patent number 4,963,957
- Issue date Oct 16, 1990
- NEC Corporation
- Susumu Ohi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multilayer silicide contact system and...
- Patent number 4,800,177
- Issue date Jan 24, 1989
- NEC Corporation
- Masahiko Nakamae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing PN junctions in a semiconductor region to r...
- Patent number 4,191,595
- Issue date Mar 4, 1980
- Nippon Electric Co., Ltd.
- Kunio Aomura
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF PRODUCING STRAINED Si-SOI SUBSTRATE AND STRAINED Si-SOI S...
- Publication number 20090090933
- Publication date Apr 9, 2009
- SUMCO CORPORATION
- Masaharu Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Wafer
- Publication number 20090047526
- Publication date Feb 19, 2009
- Masaharu Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method of strained silicon-SOI substrate and strained si...
- Publication number 20060214257
- Publication date Sep 28, 2006
- SUMCO CORPORATION
- Masaharu Ninomiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pasted soi substrate, process for producing the same and semiconduc...
- Publication number 20050081958
- Publication date Apr 21, 2005
- Sumitomo Mitsubishi Silicon Corporation
- Naoshi Adachi
- H01 - BASIC ELECTRIC ELEMENTS

Masahiko Nakamae

Person

Patents Grantslast 30 patents

Method for producing strained Si-SOI substrate and strained Si-SOI...

Method for manufacturing semiconductor wafer including a strained s...

Pasted SOI substrate, process for producing the same and semiconduc...

Insulating film comprising amorphous carbon fluoride, a semiconduct...

Insulating film comprising amorphous carbon fluoride, a semiconduct...

Method of manufacturing a bipolar transistor having thin base region

Semiconductor device having bipolar transistor with trench

Semiconductor device having multilayer silicide contact system and...

Method of manufacturing PN junctions in a semiconductor region to r...

Patents Applicationslast 30 patents

METHOD OF PRODUCING STRAINED Si-SOI SUBSTRATE AND STRAINED Si-SOI S...

Method for Manufacturing Semiconductor Wafer

Production method of strained silicon-SOI substrate and strained si...

Pasted soi substrate, process for producing the same and semiconduc...