Masahiko Ogirima

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Tokyo, JA

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Patents Grantslast 30 patents

Information Patent Grant
Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x...
- Patent number 4,007,074
- Issue date Feb 8, 1977
- Hitachi, Ltd.
- Masahiko Ogirima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth device
- Patent number 4,000,716
- Issue date Jan 4, 1977
- Hitachi, Ltd.
- Kazuhiro Kurata
- C30 - CRYSTAL GROWTH