Masahiko Shimada

Person

Miyagi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 9,869,033
- Issue date Jan 16, 2018
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus
- Patent number 8,623,138
- Issue date Jan 7, 2014
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 8,591,647
- Issue date Nov 26, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 8,562,737
- Issue date Oct 22, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Methods of growing a group III nitride crystal
- Patent number 7,828,896
- Issue date Nov 9, 2010
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method
- Patent number 7,531,038
- Issue date May 12, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,508,003
- Issue date Mar 24, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of growing a group III nitride crystal
- Patent number 7,261,775
- Issue date Aug 28, 2007
- Ricoh Company, Ltd.
- Hirokazu Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,250,640
- Issue date Jul 31, 2007
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 7,001,457
- Issue date Feb 21, 2006
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 6,949,140
- Issue date Sep 27, 2005
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 6,780,239
- Issue date Aug 24, 2004
- Ricoh Company, Ltd.
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 6,592,663
- Issue date Jul 15, 2003
- Ricoh Company Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20150152568
- Publication date Jun 4, 2015
- RICOH COMPANY, LTD.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20140044970
- Publication date Feb 13, 2014
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...
- Publication number 20110012235
- Publication date Jan 20, 2011
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20090173274
- Publication date Jul 9, 2009
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20090120354
- Publication date May 14, 2009
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20080282969
- Publication date Nov 20, 2008
- Ricoh Company, Ltd,
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing group III nitride crystal, group III nitride crys...
- Publication number 20070266928
- Publication date Nov 22, 2007
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Publication number 20070012239
- Publication date Jan 18, 2007
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20060130739
- Publication date Jun 22, 2006
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20050026318
- Publication date Feb 3, 2005
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of growing group III nitride crystal, group III nitride crys...
- Publication number 20040226503
- Publication date Nov 18, 2004
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Publication number 20040031437
- Publication date Feb 19, 2004
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20030164138
- Publication date Sep 4, 2003
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20020175338
- Publication date Nov 28, 2002
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growth method, crystal growth apparatus, group-III nitride...
- Publication number 20020046695
- Publication date Apr 25, 2002
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY

Masahiko Shimada

Person

Patents Grantslast 30 patents

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth apparatus

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Methods of growing a group III nitride crystal

Crystal growth method

Production of a GaN bulk crystal substrate and a semiconductor devi...

Methods of growing a group III nitride crystal

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Patents Applicationslast 30 patents

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

Method of growing group III nitride crystal, group III nitride crys...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Method of growing group III nitride crystal, group III nitride crys...

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal growth method, crystal growth apparatus, group-III nitride...