Masahiko Takikawa

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Enhancement type MESFET
- Patent number 5,949,095
- Issue date Sep 7, 1999
- Fujitsu Limited
- Masaki Nagahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with InGaP channel layer
- Patent number 5,945,695
- Issue date Aug 31, 1999
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect semiconductor device having a reduced leakage current
- Patent number 5,900,641
- Issue date May 4, 1999
- Fujitsu Limited
- Naoki Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a regrowth crystal region
- Patent number 5,818,078
- Issue date Oct 6, 1998
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT type semiconductor device having two semiconductor well layers
- Patent number 5,302,840
- Issue date Apr 12, 1994
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and production method thereof
- Patent number 5,170,230
- Issue date Dec 8, 1992
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a selectively doped heterostructure
- Patent number 5,148,245
- Issue date Sep 15, 1992
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device including a semi-insu...
- Patent number 5,128,275
- Issue date Jul 7, 1992
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor device
- Patent number 5,104,825
- Issue date Apr 14, 1992
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 4,958,203
- Issue date Sep 18, 1990
- Fujitsu Limited
- Masahiko Takikawa
- H01 - BASIC ELECTRIC ELEMENTS

Masahiko Takikawa

Person

Patents Grantslast 30 patents

Enhancement type MESFET

Semiconductor device with InGaP channel layer

Field effect semiconductor device having a reduced leakage current

Semiconductor device having a regrowth crystal region

HEMT type semiconductor device having two semiconductor well layers

Semiconductor device and production method thereof

Semiconductor device having a selectively doped heterostructure

Method for fabricating a semiconductor device including a semi-insu...

Method of producing a semiconductor device

High electron mobility transistor