Masahiro Sakai

Person

Nagoya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group-III element nitride semiconductor substrate
- Patent number 12,057,307
- Issue date Aug 6, 2024
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III element nitride semiconductor substrate
- Patent number 11,862,689
- Issue date Jan 2, 2024
- NGK Insulators, Ltd.
- Katsuhiro Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,611,017
- Issue date Mar 21, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,555,257
- Issue date Jan 17, 2023
- NGK Insulators, Ltd.
- Takayuki Hirao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Base substrate, functional element, and method for manufacturing ba...
- Patent number 11,437,233
- Issue date Sep 6, 2022
- NGK Insulators, Ltd.
- Masashi Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,309,455
- Issue date Apr 19, 2022
- NGK Insulators, Ltd.
- Takayuki Hirao
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Base substrate, functional element, and production method for base...
- Patent number 11,245,054
- Issue date Feb 8, 2022
- NGK Insulators, Ltd.
- Masahiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,088,299
- Issue date Aug 10, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 13 element nitride layer, free-standing substrate and functio...
- Patent number 11,011,678
- Issue date May 18, 2021
- NGK Insulators, Ltd.
- Takayuki Hirao
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Free-standing substrate, function element and method for producing...
- Patent number 10,249,494
- Issue date Apr 2, 2019
- NGK Insulators, Ltd.
- Takashi Yoshino
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods of producing seed crystal substrates and group 13 element n...
- Patent number 10,192,738
- Issue date Jan 29, 2019
- NGK Insulators, Ltd.
- Masahiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing nitride crystal
- Patent number 10,041,186
- Issue date Aug 7, 2018
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrates and functional devices
- Patent number 9,653,649
- Issue date May 16, 2017
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite substrates and functional device
- Patent number 9,287,453
- Issue date Mar 15, 2016
- NGK Insulators, Ltd.
- Makoto Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing crystals of nitrides of group 13 elements and m...
- Patent number 9,090,988
- Issue date Jul 28, 2015
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing gallium nitride layer and seed crystal substra...
- Patent number 8,795,431
- Issue date Aug 5, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Lamb wave device
- Patent number 7,965,015
- Issue date Jun 21, 2011
- NGK Insulators, Ltd.
- Tomoyoshi Tai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Epitaxial wafers, method for manufacturing of epitaxial wafers, met...
- Patent number 7,825,417
- Issue date Nov 2, 2010
- NGK Insulators, Ltd.
- Masahiro Sakai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Piezoelectric thin film device having a drive section with a weight...
- Patent number 7,598,826
- Issue date Oct 6, 2009
- NGK Insulators, Ltd.
- Shoichiro Yamaguchi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Epitaxial wafers, method for manufacturing of epitaxial wafers, met...
- Patent number 7,479,658
- Issue date Jan 20, 2009
- NGK Insulators, Ltd.
- Masahiro Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride film including high-resistivity Ga...
- Patent number 7,135,347
- Issue date Nov 14, 2006
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230395373
- Publication date Dec 7, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230282711
- Publication date Sep 7, 2023
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20230220587
- Publication date Jul 13, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20230215969
- Publication date Jul 6, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...
- Publication number 20230119023
- Publication date Apr 20, 2023
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite Substrate, Light Emitting Element, and Methods for Manufa...
- Publication number 20220209062
- Publication date Jun 30, 2022
- NGK Insulators, Ltd.
- Masahiko Namerikawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...
- Publication number 20220199854
- Publication date Jun 23, 2022
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...
- Publication number 20210013366
- Publication date Jan 14, 2021
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200232120
- Publication date Jul 23, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING BA...
- Publication number 20200227259
- Publication date Jul 16, 2020
- NGK Insulators, Ltd.
- Masashi GOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND PRODUCTION METHOD FOR BASE...
- Publication number 20200227589
- Publication date Jul 16, 2020
- NGK Insulators, Ltd.
- Masahiro SAKAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200203573
- Publication date Jun 25, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200190695
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194626
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- C01 - INORGANIC CHEMISTRY
Information Patent Application
GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...
- Publication number 20200194621
- Publication date Jun 18, 2020
- NGK Insulators, Ltd.
- Takayuki HIRAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PRODUCING SEED CRYSTAL SUBSTRATES AND GROUP 13 ELEMENT N...
- Publication number 20170372889
- Publication date Dec 28, 2017
- NGK Insulators, Ltd.
- Masahiro SAKAI
- C30 - CRYSTAL GROWTH
Information Patent Application
FREE-STANDING SUBSTRATE, FUNCTION ELEMENT AND METHOD FOR PRODUCING...
- Publication number 20170330749
- Publication date Nov 16, 2017
- NGK Insulators, Ltd.
- Takashi YOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Nitride Crystal
- Publication number 20160355945
- Publication date Dec 8, 2016
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
Composite Substrate, Light Emitting Element, and Methods for Manufa...
- Publication number 20160343906
- Publication date Nov 24, 2016
- NGK Insulators, Ltd.
- Masahiko Namerikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Substrates and Functional Devices
- Publication number 20160049554
- Publication date Feb 18, 2016
- NGK Insulators, Ltd.
- Makoto Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Substrates and Functional Device
- Publication number 20160005924
- Publication date Jan 7, 2016
- NGK Insulators, Ltd.
- Makoto Iwai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing Crystals of Nitrides of Group 13 Elements and M...
- Publication number 20140305369
- Publication date Oct 16, 2014
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...
- Publication number 20140026809
- Publication date Jan 30, 2014
- NGK Insulators, Ltd.
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Gallium Nitride Layer and Seed Crystal Substra...
- Publication number 20140014028
- Publication date Jan 16, 2014
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMB WAVE DEVICE
- Publication number 20100123367
- Publication date May 20, 2010
- NGK Insulators, Ltd.
- Tomoyoshi TAI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
EPITAXIAL WAFERS, METHOD FOR MANUFACTURING OF EPITAXIAL WAFERS, MET...
- Publication number 20080308909
- Publication date Dec 18, 2008
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Application
PIEZOELECTRIC THIN FILM DEVICE
- Publication number 20070210878
- Publication date Sep 13, 2007
- NGK Insulators, Ltd.
- Shoichiro YAMAGUCHI
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Epitaxial wafers, method for manufacturing of epitaxial wafers, met...
- Publication number 20050028888
- Publication date Feb 10, 2005
- NGK Insulators, Ltd.
- Masahiro Sakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing nitride film including high-resistivity Ga...
- Publication number 20050009221
- Publication date Jan 13, 2005
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH

Masahiro Sakai

Person

Patents Grantslast 30 patents

Group-III element nitride semiconductor substrate

Group-III element nitride semiconductor substrate

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Base substrate, functional element, and method for manufacturing ba...

Group 13 element nitride layer, free-standing substrate and functio...

Base substrate, functional element, and production method for base...

Group 13 element nitride layer, free-standing substrate and functio...

Group 13 element nitride layer, free-standing substrate and functio...

Free-standing substrate, function element and method for producing...

Methods of producing seed crystal substrates and group 13 element n...

Method for producing nitride crystal

Gallium nitride substrates and functional devices

Composite substrates and functional device

Method of producing crystals of nitrides of group 13 elements and m...

Method for producing gallium nitride layer and seed crystal substra...

Lamb wave device

Epitaxial wafers, method for manufacturing of epitaxial wafers, met...

Piezoelectric thin film device having a drive section with a weight...

Epitaxial wafers, method for manufacturing of epitaxial wafers, met...

Method for manufacturing nitride film including high-resistivity Ga...

Patents Applicationslast 30 patents

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

GROUP-III ELEMENT NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

FREE-STANDING SUBSTRATE FOR EPITAXIAL CRYSTAL GROWTH, AND FUNCTIONA...

Composite Substrate, Light Emitting Element, and Methods for Manufa...

METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SE...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE, FUNCTIONAL...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING BA...

BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND PRODUCTION METHOD FOR BASE...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

GROUP 13 ELEMENT NITRIDE LAYER, FREE-STANDING SUBSTRATE AND FUNCTIO...

METHODS OF PRODUCING SEED CRYSTAL SUBSTRATES AND GROUP 13 ELEMENT N...

FREE-STANDING SUBSTRATE, FUNCTION ELEMENT AND METHOD FOR PRODUCING...

Method for Producing Nitride Crystal

Composite Substrate, Light Emitting Element, and Methods for Manufa...

Gallium Nitride Substrates and Functional Devices

Composite Substrates and Functional Device

Method of Producing Crystals of Nitrides of Group 13 Elements and M...

Process for Producing Group 13 Metal Nitride, and Seed Crystal Subs...

Method for Producing Gallium Nitride Layer and Seed Crystal Substra...

LAMB WAVE DEVICE

EPITAXIAL WAFERS, METHOD FOR MANUFACTURING OF EPITAXIAL WAFERS, MET...

PIEZOELECTRIC THIN FILM DEVICE

Epitaxial wafers, method for manufacturing of epitaxial wafers, met...

Method for manufacturing nitride film including high-resistivity Ga...