Masahiro Sakurada

Person

Fukushima, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for evaluating edge shape of silicon wafer, apparatus for ev...
- Patent number 11,486,833
- Issue date Nov 1, 2022
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- B24 - GRINDING POLISHING
Information Patent Grant
Silicon epitaxial wafer and method of producing silicon epitaxial w...
- Patent number 10,355,092
- Issue date Jul 16, 2019
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing silicon single crystal
- Patent number 9,938,634
- Issue date Apr 10, 2018
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer and manufacturing method thereof
- Patent number 9,425,345
- Issue date Aug 23, 2016
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing single crystal
- Patent number 8,147,611
- Issue date Apr 3, 2012
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Soi wafer and a method for producing the same
- Patent number 7,518,187
- Issue date Apr 14, 2009
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soi wafer and a method for producing the same
- Patent number 7,407,866
- Issue date Aug 5, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a single crystal and a single crystal
- Patent number 7,384,477
- Issue date Jun 10, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal and a single crystal
- Patent number 7,323,048
- Issue date Jan 29, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Annealed wafer and method for manufacturing the same
- Patent number 7,311,888
- Issue date Dec 25, 2007
- Shin-Etsu Handotai Co., Ltd.
- Hiroshi Takeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer, an epitaxial wafer and a method for p...
- Patent number 7,294,196
- Issue date Nov 13, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite heater for producing single crystal, apparatus for produci...
- Patent number 7,258,744
- Issue date Aug 21, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing single crystal and single crystal
- Patent number 7,226,507
- Issue date Jun 5, 2007
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing P-doped silicon single crystal and P-doped N-ty...
- Patent number 7,214,268
- Issue date May 8, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SOI wafer and a method for producing an SOI wafer
- Patent number 7,129,123
- Issue date Oct 31, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer and method for producing silicon singl...
- Patent number 6,913,646
- Issue date Jul 5, 2005
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for manufacturing the same
- Patent number 6,893,499
- Issue date May 17, 2005
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon wafer, method for producing the same and subtrate...
- Patent number 6,565,822
- Issue date May 20, 2003
- Shin-Etsu Handotai Co., Ltd.
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and a method for producing it
- Patent number 6,482,260
- Issue date Nov 19, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon single crystal wafer and method for producing it
- Patent number 6,190,452
- Issue date Feb 20, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon monocrystal and silicon monocrystal wafer
- Patent number 6,174,364
- Issue date Jan 16, 2001
- Shin-Etsu Handotai Co., Ltd.
- Hideki Yamanaka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing crystals by the czochralski meth...
- Patent number 6,071,337
- Issue date Jun 6, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing crystals according to the Czochralski m...
- Patent number 5,948,163
- Issue date Sep 7, 1999
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a single crystal using czochralski technique
- Patent number 5,938,842
- Issue date Aug 17, 1999
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for producing single crystal using Czochralski...
- Patent number 5,817,171
- Issue date Oct 6, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fused silica glass crucible
- Patent number 5,730,800
- Issue date Mar 24, 1998
- Shin-Etsu Handotai Co., Ltd.
- Wataru Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal with low defect density and method of produc...
- Patent number 5,728,211
- Issue date Mar 17, 1998
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus and method for the uniform distribution of crystal defect...
- Patent number 5,704,973
- Issue date Jan 6, 1998
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the preparation of a single crystal of silicon with decr...
- Patent number 5,667,584
- Issue date Sep 16, 1997
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for the preparation of silicon single crystal
- Patent number 5,609,682
- Issue date Mar 11, 1997
- Shin-Etsu Handotai Co., Ltd.
- Wataru Sato
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR EVALUATING EDGE SHAPE OF SILICON WAFER, APPARATUS FOR EV...
- Publication number 20200240929
- Publication date Jul 30, 2020
- Shin-Etsu Handotai Co., Ltd.
- Masahiro SAKURADA
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR HEAT-TREATING SILICON SINGLE CRYSTAL WAFER
- Publication number 20170253995
- Publication date Sep 7, 2017
- Shin-Etsu Handotai Co., Ltd.
- Wei Feng QU
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL W...
- Publication number 20160126318
- Publication date May 5, 2016
- Shin-Etsu Handotai Co., Ltd.
- Masahiro SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SILICON SINGLE CRYSTAL
- Publication number 20160068992
- Publication date Mar 10, 2016
- SHINE-TSU HANDOTAI CO., LTD.
- Masahiro SAKURADA
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF
- Publication number 20140374861
- Publication date Dec 25, 2014
- Ryoji Hoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
Quartz Glass Crucible for Pulling Silicon Single Crystal and Method...
- Publication number 20100139549
- Publication date Jun 10, 2010
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Single Crystal
- Publication number 20100126409
- Publication date May 27, 2010
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
An Apparatus for Producing a Single Crystal
- Publication number 20080035050
- Publication date Feb 14, 2008
- SHIN-ETSU HANDOTAI CO., LTD.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal and single crystal
- Publication number 20070017433
- Publication date Jan 25, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing single crystal and single crystal
- Publication number 20060174819
- Publication date Aug 10, 2006
- Shin-Etsu Handotai Co., Ltd.
- Nobuaki Mitamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal and single crystal
- Publication number 20060130740
- Publication date Jun 22, 2006
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and production method therefor
- Publication number 20060113594
- Publication date Jun 1, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and method for manufacturing same
- Publication number 20060086313
- Publication date Apr 27, 2006
- SHIN-ETSU HANDOTAI CO LTD
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Annealed wafer and anneald wafer manufacturing method
- Publication number 20060075957
- Publication date Apr 13, 2006
- Hiroshi Takeno
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing p doped silicon single crystal and p doped n...
- Publication number 20060065184
- Publication date Mar 30, 2006
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and epitaxial wafer, and method for pr...
- Publication number 20050252441
- Publication date Nov 17, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Graphite heater for producing single crystal, single crystal produc...
- Publication number 20050205004
- Publication date Sep 22, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Soi wafer and method for manufacturing soi wafer
- Publication number 20050064632
- Publication date Mar 24, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for producing silicon singl...
- Publication number 20030116082
- Publication date Jun 26, 2003
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and method for manufacturing the same
- Publication number 20030106484
- Publication date Jun 12, 2003
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer and a method for producing it
- Publication number 20010000093
- Publication date Apr 5, 2001
- Shin-Etsu Handotai Co., Ltd.,
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH

Masahiro Sakurada

Person

Patents Grantslast 30 patents

Method for evaluating edge shape of silicon wafer, apparatus for ev...

Silicon epitaxial wafer and method of producing silicon epitaxial w...

Method of producing silicon single crystal

Epitaxial wafer and manufacturing method thereof

Method of manufacturing single crystal

Soi wafer and a method for producing the same

Soi wafer and a method for producing the same

Method for producing a single crystal and a single crystal

Method for producing a single crystal and a single crystal

Annealed wafer and method for manufacturing the same

Silicon single crystal wafer, an epitaxial wafer and a method for p...

Graphite heater for producing single crystal, apparatus for produci...

Method for producing single crystal and single crystal

Method of producing P-doped silicon single crystal and P-doped N-ty...

SOI wafer and a method for producing an SOI wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Epitaxial silicon wafer, method for producing the same and subtrate...

Silicon single crystal wafer and a method for producing it

Silicon single crystal wafer and method for producing it

Method for producing silicon monocrystal and silicon monocrystal wafer

Apparatus and method for producing crystals by the czochralski meth...

Apparatus for manufacturing crystals according to the Czochralski m...

Method for producing a single crystal using czochralski technique

Apparatus and method for producing single crystal using Czochralski...

Fused silica glass crucible

Silicon single crystal with low defect density and method of produc...

Apparatus and method for the uniform distribution of crystal defect...

Method for the preparation of a single crystal of silicon with decr...

Method for the preparation of silicon single crystal

Patents Applicationslast 30 patents

METHOD FOR EVALUATING EDGE SHAPE OF SILICON WAFER, APPARATUS FOR EV...

METHOD FOR HEAT-TREATING SILICON SINGLE CRYSTAL WAFER

SILICON EPITAXIAL WAFER AND METHOD OF PRODUCING SILICON EPITAXIAL W...

METHOD OF PRODUCING SILICON SINGLE CRYSTAL

EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF

Quartz Glass Crucible for Pulling Silicon Single Crystal and Method...

Method of Manufacturing Single Crystal

An Apparatus for Producing a Single Crystal

Process for producing single crystal and single crystal

Method for producing single crystal and single crystal

Process for producing single crystal and single crystal

Soi wafer and production method therefor

Soi wafer and method for manufacturing same

Annealed wafer and anneald wafer manufacturing method

Process for producing p doped silicon single crystal and p doped n...

Silicon single crystal wafer and epitaxial wafer, and method for pr...

Graphite heater for producing single crystal, single crystal produc...

Soi wafer and method for manufacturing soi wafer

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer and method for manufacturing the same

Silicon single crystal wafer and a method for producing it