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Masahiro Sugawara
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Tokyo, JP
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last 30 patents
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Patent Grant
Semiconductor device having buried gate electrode with silicide lay...
Patent number
6,171,916
Issue date
Jan 9, 2001
Nippon Steel Corporation
Masahiro Sugawara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device having buried gate electrode with silicide lay...
Patent number
5,994,736
Issue date
Nov 30, 1999
United Microelectronics Corporation
Masahiro Sugawara
H01 - BASIC ELECTRIC ELEMENTS