Masahisa Suzuki

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Tokyo, JP

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Patents Grantslast 30 patents

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Semiconductor device having overlapping conductor layers and method...
- Patent number 5,358,900
- Issue date Oct 25, 1994
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit having a reduced side gate effect
- Patent number 5,276,340
- Issue date Jan 4, 1994
- Fujitsu Limited
- Teruo Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having overlapping conductor layers
- Patent number 5,252,843
- Issue date Oct 12, 1993
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing enhancement mode and depletion mode FETs
- Patent number 4,615,102
- Issue date Oct 7, 1986
- Fujitsu Limited
- Masahisa Suzuki
- H01 - BASIC ELECTRIC ELEMENTS