Masahito Miyashita

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Group III nitride semiconductor growth substrate, group III nitride...
- Patent number 8,878,189
- Issue date Nov 4, 2014
- Dowa Holdings Co., Ltd.
- Ryuichi Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor growth substrate, III-nitride semiconduct...
- Patent number 8,736,025
- Issue date May 27, 2014
- Dowa Electroncs Materials Co., Ltd.
- Ryuichi Toba
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SUSCEPTOR, CRYSTAL GROWTH APPARATUS, AND CRYSTAL GROWTH METHOD
- Publication number 20150206785
- Publication date Jul 23, 2015
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Masahito Miyashita
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE
- Publication number 20130137246
- Publication date May 30, 2013
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Ryuichi Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, GROUP III NITRIDE...
- Publication number 20120061683
- Publication date Mar 15, 2012
- DOWA ELECTRONICS MATERIALS CO., LTD.
- Ryuichi Toba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE, III-NITRIDE SEMICONDUCT...
- Publication number 20110254135
- Publication date Oct 20, 2011
- Dowa Holdings Co., Ltd.
- Ryuichi Toba
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE FOR FILM GROWTH OF GROUP III NITRIDES, METHOD OF MANUFACT...
- Publication number 20070045662
- Publication date Mar 1, 2007
- DOWA MINING CO., LTD.
- Shigeaki SUMIYA
- H01 - BASIC ELECTRIC ELEMENTS