Masakatu Kojima

Person

Yokosuka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor silicon wafer and process for producing it
- Patent number 5,738,942
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Atsuko Kubota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing Semiconductor silicon wafer
- Patent number 5,534,294
- Issue date Jul 9, 1996
- Kabushiki Kaisha Toshiba
- Atsuko Kubota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal pulling method
- Patent number 5,073,229
- Issue date Dec 17, 1991
- Kabushiki Kaisha Toshiba
- Youji Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling apparatus and crystal pulling method
- Patent number 5,034,200
- Issue date Jul 23, 1991
- Kabushiki Kaisha Toshiba
- Youji Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling apparatus and crystal pulling method using the same
- Patent number 5,021,225
- Issue date Jun 4, 1991
- Kabushiki Kaisha Toshiba
- Youji Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling apparatus
- Patent number 4,894,206
- Issue date Jan 16, 1990
- Kabushiki Kaisha Toshiba
- Youji Yamashita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for growing compound semiconductor single crystals
- Patent number 4,734,267
- Issue date Mar 29, 1988
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masakatu Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing monocrystalline silicon
- Patent number 4,497,777
- Issue date Feb 5, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Masakatu Kojima
- C30 - CRYSTAL GROWTH

Masakatu Kojima

Person

Patents Grantslast 30 patents

Semiconductor silicon wafer and process for producing it

Process for producing Semiconductor silicon wafer

Semiconductor crystal pulling method

Crystal pulling apparatus and crystal pulling method

Crystal pulling apparatus and crystal pulling method using the same

Crystal pulling apparatus

Apparatus for growing compound semiconductor single crystals

Apparatus for producing monocrystalline silicon