Masaki Ogawa

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Tokyo, JA

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Patents Grantslast 30 patents

Information Patent Grant
Dual-gate Schottky barrier gate fet having an intermediate electrod...
- Patent number 4,048,646
- Issue date Sep 13, 1977
- Nippon Electric Company, Limited
- Masaki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having closely space...
- Patent number 3,994,758
- Issue date Nov 30, 1976
- Nippon Electric Company, Ltd.
- Masaki Ogawa
- H01 - BASIC ELECTRIC ELEMENTS