Masami Nagaoka

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor switch
- Patent number 9,627,208
- Issue date Apr 18, 2017
- Kabushiki Kaisha Toshiba
- Atsushi Ishimaru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-frequency power amplifier and mobile communication device usin...
- Patent number 6,134,424
- Issue date Oct 17, 2000
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High frequency switch device, front end unit and transceiver
- Patent number 6,118,985
- Issue date Sep 12, 2000
- Kabushiki Kaisha Toshiba
- Katsue Kawakyu
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
High frequency amplifier having a variable attenuator connected to...
- Patent number 6,075,414
- Issue date Jun 13, 2000
- Kabushiki Kaisha Toshiba
- Masami Nagaoka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Metal semiconductor field effect transistor of source-ground type
- Patent number 5,757,235
- Issue date May 26, 1998
- Kabushiki Kaisha Toshiba
- Ikuo Fujiwara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated circuit amplifier
- Patent number 5,638,027
- Issue date Jun 10, 1997
- Kabushiki Kaisha Toshiba
- Masami Nagaoka
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Metal semiconductor device and method for producing the same
- Patent number 5,273,937
- Issue date Dec 28, 1993
- Kabushiki Kaisha Toshiba
- Kazuya Nishihori
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240105796
- Publication date Mar 28, 2024
- Kabushiki Kaisha Toshiba
- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20230290876
- Publication date Sep 14, 2023
- Kabushiki Kaisha Toshiba
- Mitsutoshi NAKAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SWITCH
- Publication number 20160190231
- Publication date Jun 30, 2016
- Kabushiki Kaisha Toshiba
- Atsushi ISHIMARU
- H01 - BASIC ELECTRIC ELEMENTS

Masami Nagaoka

Person

Patents Grantslast 30 patents

Semiconductor switch

High-frequency power amplifier and mobile communication device usin...

High frequency switch device, front end unit and transceiver

High frequency amplifier having a variable attenuator connected to...

Metal semiconductor field effect transistor of source-ground type

Integrated circuit amplifier

Metal semiconductor device and method for producing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR SWITCH