Masami Naito

Person

Inazawa-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
SiC epitaxial wafer and method for producing same
- Patent number 11,107,892
- Issue date Aug 31, 2021
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus, susceptor, and film forming method
- Patent number 10,584,417
- Issue date Mar 10, 2020
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC epitaxial wafer by simultaneously util...
- Patent number 10,262,863
- Issue date Apr 16, 2019
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor film-forming apparatus and film-formi...
- Patent number 9,879,359
- Issue date Jan 30, 2018
- Denso Corporation
- Hiroaki Fujibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming manufacturing apparatus and method
- Patent number 9,873,941
- Issue date Jan 23, 2018
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,598,792
- Issue date Mar 21, 2017
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,570,337
- Issue date Feb 14, 2017
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,518,322
- Issue date Dec 13, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device having junction barrier Schott...
- Patent number 9,337,276
- Issue date May 10, 2016
- Denso Corporation
- Hideyuki Uehigashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,273,412
- Issue date Mar 1, 2016
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing silicon carbide single crystal
- Patent number 8,980,003
- Issue date Mar 17, 2015
- Denso Corporation
- Hiroki Watanabe
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Stacked single crystal compound semiconductor substrates
- Patent number 8,704,340
- Issue date Apr 22, 2014
- Denso Corporation
- Hiroaki Fujibayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal compound semiconductor substrate
- Patent number 8,507,921
- Issue date Aug 13, 2013
- Denso Corporation
- Hiroaki Fujibayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number RE43840
- Issue date Dec 4, 2012
- Denso Corporation
- Mitsuhiro Kataoka
- 257 - Active solid-state devices
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 7,147,714
- Issue date Dec 12, 2006
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC single crystal, method for manufacturing SiC single crystal, Si...
- Patent number 6,890,600
- Issue date May 10, 2005
- Denso Corporation
- Daisuke Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 6,853,006
- Issue date Feb 8, 2005
- Denso Corporation
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of silicon carbide single crystals
- Patent number 6,746,787
- Issue date Jun 8, 2004
- Denso Corporation
- Masami Naito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device using...
- Patent number 6,297,100
- Issue date Oct 2, 2001
- Denso Corporation
- Rajesh Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method thereof
- Patent number 6,057,558
- Issue date May 2, 2000
- Denson Corporation
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate electrode in a grove and a diffu...
- Patent number 5,714,781
- Issue date Feb 3, 1998
- Nippondenso Co., Ltd.
- Tsuyoshi Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20200083330
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARTUS
- Publication number 20180374721
- Publication date Dec 27, 2018
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...
- Publication number 20170345658
- Publication date Nov 30, 2017
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...
- Publication number 20160138190
- Publication date May 19, 2016
- Denso Corporation
- Hiroaki FUJIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD
- Publication number 20160024652
- Publication date Jan 28, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM-FORMING MANUFACTURING APPARATUS AND METHOD
- Publication number 20150329967
- Publication date Nov 19, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING JUNCTION BARRIER SCHOTT...
- Publication number 20150206941
- Publication date Jul 23, 2015
- DENSO CORPORATION
- Hideyuki Uehigashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20150090693
- Publication date Apr 2, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FILM FORMATION APPARATUS AND FILM FORMATION METHOD
- Publication number 20140287539
- Publication date Sep 25, 2014
- Hideki ITO
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20130306977
- Publication date Nov 21, 2013
- DENSO CORPORATION
- Hiroaki FUJIBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FIL...
- Publication number 20130247816
- Publication date Sep 26, 2013
- Denso Corporation
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20130152853
- Publication date Jun 20, 2013
- DENSO CORPORATION
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING APPARATUS AND FILM-FORMING METHOD
- Publication number 20120325138
- Publication date Dec 27, 2012
- NuFlare Techology, Inc.
- Kunihiko SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOUND SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20120181550
- Publication date Jul 19, 2012
- DENSO CORPORATION
- Hiroaki FUJIBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20100199910
- Publication date Aug 12, 2010
- DENSO CORPORATION
- Hiroki WATANABE
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20040194693
- Publication date Oct 7, 2004
- Masami Naito
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon carbide semiconductor device
- Publication number 20040051136
- Publication date Mar 18, 2004
- Mitsuhiro Kataoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC single crystal, method for manufacturing SiC single crystal, Si...
- Publication number 20030070611
- Publication date Apr 17, 2003
- Daisuke Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing method of silicon carbide single crystals
- Publication number 20020069818
- Publication date Jun 13, 2002
- Masami Naito
- C30 - CRYSTAL GROWTH

Masami Naito

Person

Patents Grantslast 30 patents

SiC epitaxial wafer and method for producing same

Film forming apparatus, susceptor, and film forming method

Method for manufacturing SiC epitaxial wafer by simultaneously util...

Silicon carbide semiconductor film-forming apparatus and film-formi...

Film-forming manufacturing apparatus and method

Film-forming apparatus and film-forming method

Film formation apparatus and film formation method

Film formation apparatus and film formation method

Silicon carbide semiconductor device having junction barrier Schott...

Film-forming apparatus and film-forming method

Method of manufacturing silicon carbide single crystal

Stacked single crystal compound semiconductor substrates

Single crystal compound semiconductor substrate

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystals

SiC single crystal, method for manufacturing SiC single crystal, Si...

Silicon carbide semiconductor device

Manufacturing method of silicon carbide single crystals

Method of manufacturing silicon carbide semiconductor device using...

Silicon carbide semiconductor device and manufacturing method thereof

Semiconductor device having a gate electrode in a grove and a diffu...

Patents Applicationslast 30 patents

SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

FILM FORMING APPARTUS

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...

SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...

FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD

FILM-FORMING MANUFACTURING APPARATUS AND METHOD

SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING JUNCTION BARRIER SCHOTT...

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

FILM FORMATION APPARATUS AND FILM FORMATION METHOD

COMPOUND SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

FILM-FORMING APPARATUS FOR THE FORMATION OF SILICON CARBIDE AND FIL...

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

FILM-FORMING APPARATUS AND FILM-FORMING METHOD

COMPOUND SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

METHOD OF MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL

Manufacturing method of silicon carbide single crystals

Silicon carbide semiconductor device

SiC single crystal, method for manufacturing SiC single crystal, Si...

Manufacturing method of silicon carbide single crystals