Masami Nakanishi

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing silicon ingot single crystal
- Patent number 12,163,247
- Issue date Dec 10, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for collecting dust from single crystal growth system
- Patent number 12,076,677
- Issue date Sep 3, 2024
- GlobalWafers Co., Ltd.
- Masami Nakanishi
- B04 - CENTRIFUGAL APPARATUS OR MACHINES FOR CARRYING-OUT PHYSICAL OR CHEMICAL...
Information Patent Grant
Apparatus for producing Si ingot single crystal
- Patent number 12,037,697
- Issue date Jul 16, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing Si ingot single crystal, Si ingot single cryst...
- Patent number 12,037,696
- Issue date Jul 16, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for collecting dust from single crystal growth system and du...
- Patent number 11,845,030
- Issue date Dec 19, 2023
- GlobalWafers Co., Ltd.
- Masami Nakanishi
- B04 - CENTRIFUGAL APPARATUS OR MACHINES FOR CARRYING-OUT PHYSICAL OR CHEMICAL...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR COLLECTING DUST FROM SINGLE CRYSTAL GROWTH SYSTEM
- Publication number 20230347271
- Publication date Nov 2, 2023
- GLOBALWAFERS CO., LTD.
- Masami Nakanishi
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
SI INGOT SINGLE CRYSTAL
- Publication number 20230304185
- Publication date Sep 28, 2023
- GLOBALWAFERS CO., LTD.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SI INGOT SINGLE CRYSTAL
- Publication number 20230295833
- Publication date Sep 21, 2023
- GLOBALWAFERS CO., LTD.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON INGOT SINGLE CRYSTAL
- Publication number 20230160095
- Publication date May 25, 2023
- GLOBALWAFERS CO., LTD.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR COLLECTING DUST FROM SINGLE CRYSTAL GROWTH SYSTEM AND DU...
- Publication number 20210394100
- Publication date Dec 23, 2021
- GLOBALWAFERS CO., LTD.
- Masami Nakanishi
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
METHOD FOR PRODUCING SI INGOT SINGLE CRYSTAL, SI INGOT SINGLE CRYST...
- Publication number 20210363656
- Publication date Nov 25, 2021
- GLOBALWAFERS CO., LTD.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Application
MELT GAP MEASURING APPARATUS, CRYSTAL GROWTH APPARATUS AND MELT GAP...
- Publication number 20160312379
- Publication date Oct 27, 2016
- GLOBALWAFERS CO., LTD.
- Chun-Hung Chen
- C30 - CRYSTAL GROWTH

Masami Nakanishi

Person

Patents Grantslast 30 patents

Method for producing silicon ingot single crystal

Method for collecting dust from single crystal growth system

Apparatus for producing Si ingot single crystal

Method for producing Si ingot single crystal, Si ingot single cryst...

Method for collecting dust from single crystal growth system and du...

Patents Applicationslast 30 patents

METHOD FOR COLLECTING DUST FROM SINGLE CRYSTAL GROWTH SYSTEM

SI INGOT SINGLE CRYSTAL

APPARATUS FOR PRODUCING SI INGOT SINGLE CRYSTAL

METHOD FOR PRODUCING SILICON INGOT SINGLE CRYSTAL

METHOD FOR COLLECTING DUST FROM SINGLE CRYSTAL GROWTH SYSTEM AND DU...

METHOD FOR PRODUCING SI INGOT SINGLE CRYSTAL, SI INGOT SINGLE CRYST...

MELT GAP MEASURING APPARATUS, CRYSTAL GROWTH APPARATUS AND MELT GAP...