Masamichi Ohkubo

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Hikari -Yamaguchi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Silicon single crystal substrate and method of manufacturing the same
- Patent number 9,303,332
- Issue date Apr 5, 2016
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,524,001
- Issue date Sep 3, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and method for producing the same
- Patent number 8,524,002
- Issue date Sep 3, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single Crystal manufacturing method
- Patent number 8,172,943
- Issue date May 8, 2012
- Siltronic AG
- Masamichi Ohkubo
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Silicon Single Crystal Substrate and Method Of Manufacturing The Same
- Publication number 20130161793
- Publication date Jun 27, 2013
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Wafer and Method For Producing The Same
- Publication number 20110156216
- Publication date Jun 30, 2011
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer and method for producing the same
- Publication number 20100164071
- Publication date Jul 1, 2010
- Siltronic AG
- Katsuhiko Nakai
- C30 - CRYSTAL GROWTH
Information Patent Application
Single Crystal Manufacturing Method
- Publication number 20080302294
- Publication date Dec 11, 2008
- Siltronic AG
- Masamichi Ohkubo
- C30 - CRYSTAL GROWTH