Masamichi Yanagida

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Ota-city, JP

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Patents Grantslast 30 patents

Information Patent Grant
MOS transistors formed on the front and back surface of a semicondu...
- Patent number 8,018,031
- Issue date Sep 13, 2011
- Semiconductor Components Industries, LLC
- Masamichi Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate semiconductor device and manufacturing method of the...
- Patent number 7,413,954
- Issue date Aug 19, 2008
- Sanyo Electric Co., LTD
- Hirotoshi Kubo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080296675
- Publication date Dec 4, 2008
- SANYO ELECTRIC CO., LTD.
- Masamichi YANAGIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20070215938
- Publication date Sep 20, 2007
- Sanyo Electric Co., Ltd.
- Masamichi Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device with trench
- Publication number 20070166905
- Publication date Jul 19, 2007
- Sanyo Electric Co., Ltd.
- Masamichi Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20060118866
- Publication date Jun 8, 2006
- Sanyo Electric Co., Ltd.
- Masamichi Yanagida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate semiconductor device and manufacturing method of the...
- Publication number 20060065926
- Publication date Mar 30, 2006
- Sanyo Electric Co., Ltd.
- Hirotoshi Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060054970
- Publication date Mar 16, 2006
- SANYO ELECTRIC CO., LTD.
- Masamichi Yanagida
- H01 - BASIC ELECTRIC ELEMENTS