Masanobu Nogome

Person

Bizen, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 7,176,099
- Issue date Feb 13, 2007
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,091,528
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a photosensitive resin covering at l...
- Patent number 7,012,337
- Issue date Mar 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,982,141
- Issue date Jan 3, 2006
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-junction bipolar transistor and manufacturing method thereof
- Patent number 6,903,388
- Issue date Jun 7, 2005
- Matsushita Electric Industrial Co., Ltd.
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing hetero-junction bipolar transistor
- Patent number 6,777,301
- Issue date Aug 17, 2004
- Matsushita Electric Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,218,685
- Issue date Apr 17, 2001
- Matsushita Electronics Corporation
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hetero-junction bipolar transistor
- Publication number 20080265283
- Publication date Oct 30, 2008
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20050199910
- Publication date Sep 15, 2005
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20050145884
- Publication date Jul 7, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050042549
- Publication date Feb 24, 2005
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero-junction bipolar transistor and manufacturing method thereof
- Publication number 20040262634
- Publication date Dec 30, 2004
- Keiichi Murayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20040021153
- Publication date Feb 5, 2004
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing hetero-junction bipolar transistor
- Publication number 20030096470
- Publication date May 22, 2003
- Matsushita Electric Industrial Co., Ltd.
- Masanobu Nogome
- H01 - BASIC ELECTRIC ELEMENTS

Masanobu Nogome

Person

Patents Grantslast 30 patents

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device

Semiconductor device including a photosensitive resin covering at l...

Semiconductor device and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Method of producing hetero-junction bipolar transistor

Semiconductor device and method for fabricating the same

Patents Applicationslast 30 patents

Hetero-junction bipolar transistor

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device

Semiconductor device and manufacturing method thereof

Hetero-junction bipolar transistor and manufacturing method thereof

Semiconductor device and manufacturing method thereof

Method of producing hetero-junction bipolar transistor