Masanobu Zenke

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,593,233
- Issue date Jul 15, 2003
- NEC Electronics Corporation
- Kazuki Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 6,258,690
- Issue date Jul 10, 2001
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with unbreakable testing elements for evaluati...
- Patent number 6,204,076
- Issue date Mar 20, 2001
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming a capacitor incorporated in a semiconductor device
- Patent number 6,146,966
- Issue date Nov 14, 2000
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device having capacitor increa...
- Patent number 6,020,248
- Issue date Feb 1, 2000
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with unbreakable testing elements for evaluati...
- Patent number 5,969,381
- Issue date Oct 19, 1999
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor incorporated in semiconductor device having a lower elect...
- Patent number 5,959,326
- Issue date Sep 28, 1999
- NEC Corporation
- Fumiki Aiso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a semiconductor integrated circuit having a c...
- Patent number 5,956,595
- Issue date Sep 21, 1999
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a capacitor in a memory cell in a dynamic random...
- Patent number 5,897,983
- Issue date Apr 27, 1999
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method for preventing tungsten fro...
- Patent number 5,851,581
- Issue date Dec 22, 1998
- NEC Corporation
- Masanobu Zenke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having a wiring layer and method for manufactu...
- Patent number 5,843,840
- Issue date Dec 1, 1998
- NEC Corporation
- Kazuki Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of roughening a polysilicon layer of a random crystal struct...
- Patent number 5,811,333
- Issue date Sep 22, 1998
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multilayered wiring structure
- Patent number 5,798,569
- Issue date Aug 25, 1998
- NEC Corporation
- Kazuki Miyazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a semiconductor device
- Patent number 5,700,738
- Issue date Dec 23, 1997
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating capacitor having waved rough surface of accu...
- Patent number 5,700,710
- Issue date Dec 23, 1997
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of fabricating dynamic random access memory cell having int...
- Patent number 5,691,229
- Issue date Nov 25, 1997
- NEC Corporation
- Kenji Okamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon layer having impurity diffusion pr...
- Patent number 5,525,540
- Issue date Jun 11, 1996
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor devices
- Patent number 5,521,126
- Issue date May 28, 1996
- NEC Corporation
- Kenji Okamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,441,594
- Issue date Aug 15, 1995
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor integrated circuit device having a...
- Patent number 5,372,962
- Issue date Dec 13, 1994
- NEC Corporation
- Toshiyuki Hirota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitor with a metal nitride film and metal oxide d...
- Patent number 5,187,557
- Issue date Feb 16, 1993
- NEC Corporation
- Masanobu Zenke
- H01 - BASIC ELECTRIC ELEMENTS

Masanobu Zenke

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Method of manufacturing semiconductor device

Semiconductor device with unbreakable testing elements for evaluati...

Process for forming a capacitor incorporated in a semiconductor device

Method for fabricating semiconductor device having capacitor increa...

Semiconductor device with unbreakable testing elements for evaluati...

Capacitor incorporated in semiconductor device having a lower elect...

Method of fabricating a semiconductor integrated circuit having a c...

Method for forming a capacitor in a memory cell in a dynamic random...

Semiconductor device fabrication method for preventing tungsten fro...

Semiconductor device having a wiring layer and method for manufactu...

Method of roughening a polysilicon layer of a random crystal struct...

Semiconductor device having multilayered wiring structure

Method for producing a semiconductor device

Process of fabricating capacitor having waved rough surface of accu...

Process of fabricating dynamic random access memory cell having int...

Method for manufacturing silicon layer having impurity diffusion pr...

Method of fabricating semiconductor devices

Method of manufacturing semiconductor device

Method of making a semiconductor integrated circuit device having a...

Semiconductor capacitor with a metal nitride film and metal oxide d...