Masanori Morishita

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Ibaraki-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
GaN crystal producing method, GaN crystal, GaN crystal substrate, s...
- Patent number 8,187,507
- Issue date May 29, 2012
- Osaka University
- Yusuke Mori
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III element nitride single crystal and g...
- Patent number 7,507,292
- Issue date Mar 24, 2009
- Osaka Industrial Promotion Organization
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystals usable as group III nitride substrate, m...
- Patent number 7,309,534
- Issue date Dec 18, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing GaN crystals and GaN crystal substrate, GaN...
- Patent number 7,288,152
- Issue date Oct 30, 2007
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GaN CRYSTAL PRODUCING METHOD, GaN CRYSTAL, GaN CRYSTAL SUBSTRATE, S...
- Publication number 20100059717
- Publication date Mar 11, 2010
- OSAKA UNIVERSITY
- Yusuke Mori
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III element nitride single crystal and g...
- Publication number 20060051942
- Publication date Mar 9, 2006
- OSAKA INDUSTRIAL PROMOTION ORGANIZATION
- Takatomo Sasaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing GaN crystals and GaN crystal substrate, GaN...
- Publication number 20050048686
- Publication date Mar 3, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride crystals usable as group III nitride substrate, m...
- Publication number 20040262630
- Publication date Dec 30, 2004
- Matsushita Electric Industrial Co., Ltd.
- Yasuo Kitaoka
- H01 - BASIC ELECTRIC ELEMENTS