Masanori Numano

Person

Yokohama-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device from which damage la...
- Patent number 8,232,197
- Issue date Jul 31, 2012
- Kabushiki Kaisha Toshiba
- Makoto Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device from which damage la...
- Patent number 7,605,076
- Issue date Oct 20, 2009
- Kabushiki Kaisha Toshiba
- Makoto Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate and method for producing the same
- Patent number 6,222,252
- Issue date Apr 24, 2001
- Kabushiki Kaisha Toshiba
- Masanori Numano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of semiconductor substrate and inspection meth...
- Patent number 5,951,755
- Issue date Sep 14, 1999
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectrically isolated substrate and method for manufacturing the...
- Patent number 5,739,575
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Masanori Numano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor silicon wafer and process for producing it
- Patent number 5,738,942
- Issue date Apr 14, 1998
- Kabushiki Kaisha Toshiba
- Atsuko Kubota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and a method for manufacturing the same
- Patent number 5,675,176
- Issue date Oct 7, 1997
- Kabushiki Kaisha Toshiba
- Yukihiro Ushiku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing Semiconductor silicon wafer
- Patent number 5,534,294
- Issue date Jul 9, 1996
- Kabushiki Kaisha Toshiba
- Atsuko Kubota
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate, method of manufacturing semiconductor subs...
- Patent number 5,508,800
- Issue date Apr 16, 1996
- Kabushiki Kaisha Toshiba
- Moriya Miyashita
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Method of manufacturing a semiconductor device from which damage la...
- Publication number 20100003816
- Publication date Jan 7, 2010
- Kabushiki Kaisha Toshiba
- Makoto Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a semiconductor device from which damage la...
- Publication number 20060189145
- Publication date Aug 24, 2006
- Makoto Honda
- H01 - BASIC ELECTRIC ELEMENTS

Masanori Numano

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device from which damage la...

Method of manufacturing a semiconductor device from which damage la...

Semiconductor substrate and method for producing the same

Manufacturing method of semiconductor substrate and inspection meth...

Dielectrically isolated substrate and method for manufacturing the...

Semiconductor silicon wafer and process for producing it

Semiconductor device and a method for manufacturing the same

Process for producing Semiconductor silicon wafer

Semiconductor substrate, method of manufacturing semiconductor subs...

Patents Applicationslast 30 patents

Method of manufacturing a semiconductor device from which damage la...

Method of manufacturing a semiconductor device from which damage la...