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Masao Moriguchi
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Vancouver, WA, US
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Patents Grants
last 30 patents
Information
Patent Grant
Active silicon device on a cleaved silicon-on-insulator substrate
Patent number
7,659,582
Issue date
Feb 9, 2010
Sharp Laboratories of America, Inc.
Steve Droes
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Isotropic polycrystalline silicon
Patent number
7,256,109
Issue date
Aug 14, 2007
Sharp Laboratories of America, Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
System and method for hydrogen exfoliation
Patent number
7,179,719
Issue date
Feb 20, 2007
Sharp Laboratories of America, Inc.
Steve Droes
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Isotropic polycrystalline silicon and method for producing same
Patent number
6,939,754
Issue date
Sep 6, 2005
Sharp Laboratories of America, Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for extending a laser annealing pulse
Patent number
6,607,971
Issue date
Aug 19, 2003
Sharp Laboratories of America, Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Active silicon device on a cleaved silicon-on-insulator substrate
Publication number
20070122998
Publication date
May 31, 2007
Sharp Laboratories of America, Inc.
Steve Droes
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
System and method for hydrogen exfoliation
Publication number
20060068565
Publication date
Mar 30, 2006
Sharp Laboratories of America, Inc.
Steve Droes
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Isotropic polycrystalline silicon
Publication number
20050170568
Publication date
Aug 4, 2005
Sharp Laboratories of America, Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Isotropic polycrystalline silicon and method for producing same
Publication number
20050037551
Publication date
Feb 17, 2005
Sharp Laboratories of America, Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Grain-free polycrystalline silicon and a method for producing same
Publication number
20040258930
Publication date
Dec 23, 2004
Sharp Laboratories of America Inc.
Masao Moriguchi
H01 - BASIC ELECTRIC ELEMENTS