Masao Nagatomo

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device having a circuit por...
- Patent number 5,888,851
- Issue date Mar 30, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Kaoru Motonami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM device comprising a stacked type capacitor and a method of man...
- Patent number 5,323,343
- Issue date Jun 21, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Ikuo Ogoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a stacked str...
- Patent number 5,300,444
- Issue date Apr 5, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Atsushi Hachisuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a redundant circuit portion and a manuf...
- Patent number 5,241,212
- Issue date Aug 31, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Kaoru Motonami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Element isolating structure of semiconductor device suitable for hi...
- Patent number 5,164,806
- Issue date Nov 17, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Masao Nagatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having bit lines formed of an interconn...
- Patent number 5,153,689
- Issue date Oct 6, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Yoshinori Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fibricating a semiconductor device having a trench
- Patent number 5,112,771
- Issue date May 12, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuya Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of implanting into the sidewall of a trench by rotating the...
- Patent number 5,047,359
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masao Nagatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device with no stress generated at...
- Patent number 4,985,368
- Issue date Jan 15, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuya Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of conductive layers and ma...
- Patent number 4,984,055
- Issue date Jan 8, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Yoshinori Okumura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an isolation oxide film
- Patent number 4,956,692
- Issue date Sep 11, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabricating method thereof
- Patent number 4,956,310
- Issue date Sep 11, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Akira Tokui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having interconnection layers of T-shape cross...
- Patent number 4,905,068
- Issue date Feb 27, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Shinichi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with no stress generated at the trench corner...
- Patent number 4,894,695
- Issue date Jan 16, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Tatsuya Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with deep bit-line channel stopper
- Patent number 4,763,182
- Issue date Aug 9, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Hiroji Ozaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricting a semiconductor device
- Patent number 4,702,796
- Issue date Oct 27, 1987
- Mitsubishi Denki Kabushiki Kaisha
- Masayuki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dry etching device
- Patent number 4,341,616
- Issue date Jul 27, 1982
- Mitsubishi Denki Kabushiki Kaisha
- Masao Nagatomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming patterned refractory metal films by selective oxy...
- Patent number 4,333,226
- Issue date Jun 8, 1982
- Mitsubishi Denki Kabushiki Kaisha
- Haruhiko Abe
- H01 - BASIC ELECTRIC ELEMENTS

Masao Nagatomo

Person

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device having a circuit por...

DRAM device comprising a stacked type capacitor and a method of man...

Method of manufacturing a semiconductor device having a stacked str...

Semiconductor device having a redundant circuit portion and a manuf...

Element isolating structure of semiconductor device suitable for hi...

Semiconductor memory device having bit lines formed of an interconn...

Method of fibricating a semiconductor device having a trench

Method of implanting into the sidewall of a trench by rotating the...

Method for making semiconductor device with no stress generated at...

Semiconductor device having a plurality of conductive layers and ma...

Semiconductor device having an isolation oxide film

Semiconductor memory device and fabricating method thereof

Semiconductor device having interconnection layers of T-shape cross...

Semiconductor device with no stress generated at the trench corner...

Semiconductor memory device with deep bit-line channel stopper

Method for fabricting a semiconductor device

Dry etching device

Method of forming patterned refractory metal films by selective oxy...