Masaro Tamatsuka

Person

Gunma, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Anodic-oxidation equipment, anodic-oxidation method, and method for...
- Patent number 11,248,306
- Issue date Feb 15, 2022
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi Ohtsuki
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...
- Patent number 7,326,658
- Issue date Feb 5, 2008
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing annealed wafer and annealed wafer
- Patent number 7,189,293
- Issue date Mar 13, 2007
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing annealed wafer and annealed wafer
- Patent number 7,153,785
- Issue date Dec 26, 2006
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon wafer and silicon wafer
- Patent number 7,147,711
- Issue date Dec 12, 2006
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heat treatment of silicon wafers and silicon wafer
- Patent number 7,011,717
- Issue date Mar 14, 2006
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon wafer
- Patent number 6,878,645
- Issue date Apr 12, 2005
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed wafer manufacturing method and annealed wafer
- Patent number 6,841,450
- Issue date Jan 11, 2005
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for heat treatment of silicon wafers and silicon wafer
- Patent number 6,809,015
- Issue date Oct 26, 2004
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing single-crystal-silicon wafers
- Patent number 6,805,743
- Issue date Oct 19, 2004
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer and manufacturing process therefor
- Patent number 6,802,899
- Issue date Oct 12, 2004
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing a bonded wafer and the bonded wafer
- Patent number 6,680,260
- Issue date Jan 20, 2004
- Shin-Etsu Handotai Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for annealed wafer
- Patent number 6,670,261
- Issue date Dec 30, 2003
- Shin-Etsu Handotai Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer for epitaxial wafer, epitaxial wafer, and method of m...
- Patent number 6,626,994
- Issue date Sep 30, 2003
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer
- Patent number 6,599,603
- Issue date Jul 29, 2003
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thermally annealing silicon wafer and silicon wafer
- Patent number 6,573,159
- Issue date Jun 3, 2003
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a bonded wafer and the bonded wafer
- Patent number 6,492,682
- Issue date Dec 10, 2002
- Shin-Etsu Handotal Co., Ltd.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon single crystal wafer, epitaxial silicon wafer, and methods...
- Patent number 6,478,883
- Issue date Nov 12, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing silicon single crystal wafer and silicon singl...
- Patent number 6,413,310
- Issue date Jul 2, 2002
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for producing silicon singl...
- Patent number 6,299,982
- Issue date Oct 9, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal wafer for particle moni...
- Patent number 6,291,874
- Issue date Sep 18, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,261,361
- Issue date Jul 17, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing SOI substrate and SOI substrate
- Patent number 6,224,668
- Issue date May 1, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing low defect silicon single crystal doped with n...
- Patent number 6,197,109
- Issue date Mar 6, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal wafer and silicon singl...
- Patent number 6,191,009
- Issue date Feb 20, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing an epitaxial silicon single crystal wafer and...
- Patent number 6,162,708
- Issue date Dec 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal wafer and a silicon s...
- Patent number 6,139,625
- Issue date Oct 31, 2000
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,077,343
- Issue date Jun 20, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Determining carbon concentration in silicon single crystal by FT-IR
- Patent number 5,444,246
- Issue date Aug 22, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Kitagawara
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for determination of interstitial oxygen conce...
- Patent number 5,386,118
- Issue date Jan 31, 1995
- Shin-Etsu Handotai Co., Ltd.
- Yutaka Kitagawara
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
ANODIC-OXIDATION EQUIPMENT, ANODIC-OXIDATION METHOD, AND METHOD FOR...
- Publication number 20210238762
- Publication date Aug 5, 2021
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
Method for heat treatment of silicon wafers and silicon wafer
- Publication number 20050025691
- Publication date Feb 3, 2005
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method for anneal wafer and anneal wafer
- Publication number 20040231759
- Publication date Nov 25, 2004
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for anneal wafer and anneal wafer
- Publication number 20040192071
- Publication date Sep 30, 2004
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing silicon wafer
- Publication number 20040023518
- Publication date Feb 5, 2004
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing silicon wafer and silicon wafer
- Publication number 20040003769
- Publication date Jan 8, 2004
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon boat with protective film, method of manufacture thereof, a...
- Publication number 20030196588
- Publication date Oct 23, 2003
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing single-crystal-silicon wafers
- Publication number 20030164139
- Publication date Sep 4, 2003
- Norihiro Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...
- Publication number 20030157814
- Publication date Aug 21, 2003
- Makoto Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for heat treatment of silicon wafers and silicon wafer
- Publication number 20030104709
- Publication date Jun 5, 2003
- SHIN-ETSU HANDOTAI CO., LTD.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing a bonded wafer and the bonded wafer
- Publication number 20030020096
- Publication date Jan 30, 2003
- SHIN-ETSU HANDOTAI CO., LTD.
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of producing anneal wafer and anneal wafer
- Publication number 20020173173
- Publication date Nov 21, 2002
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method for annealed wafer
- Publication number 20020160591
- Publication date Oct 31, 2002
- Shoji Akiyama
- H01 - BASIC ELECTRIC ELEMENTS

Masaro Tamatsuka

Person

Patents Grantslast 30 patents

Anodic-oxidation equipment, anodic-oxidation method, and method for...

Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...

Method of producing annealed wafer and annealed wafer

Method of producing annealed wafer and annealed wafer

Method of producing silicon wafer and silicon wafer

Method for heat treatment of silicon wafers and silicon wafer

Method for manufacturing silicon wafer

Annealed wafer manufacturing method and annealed wafer

Method for heat treatment of silicon wafers and silicon wafer

Method for manufacturing single-crystal-silicon wafers

Silicon single crystal wafer and manufacturing process therefor

Method of producing a bonded wafer and the bonded wafer

Production method for annealed wafer

Silicon wafer for epitaxial wafer, epitaxial wafer, and method of m...

Silicon wafer

Method for thermally annealing silicon wafer and silicon wafer

Method of producing a bonded wafer and the bonded wafer

Silicon single crystal wafer, epitaxial silicon wafer, and methods...

Method for producing silicon single crystal wafer and silicon singl...

Silicon single crystal wafer and method for producing silicon singl...

Method for producing silicon single crystal wafer for particle moni...

Silicon single crystal wafer having few defects wherein nitrogen is...

Method for producing SOI substrate and SOI substrate

Method for producing low defect silicon single crystal doped with n...

Method for producing silicon single crystal wafer and silicon singl...

Method for producing an epitaxial silicon single crystal wafer and...

Method for producing a silicon single crystal wafer and a silicon s...

Silicon single crystal wafer having few defects wherein nitrogen is...

Determining carbon concentration in silicon single crystal by FT-IR

Method and apparatus for determination of interstitial oxygen conce...

Patents Applicationslast 30 patents

ANODIC-OXIDATION EQUIPMENT, ANODIC-OXIDATION METHOD, AND METHOD FOR...

Method for heat treatment of silicon wafers and silicon wafer

Production method for anneal wafer and anneal wafer

Production method for anneal wafer and anneal wafer

Method for manufacturing silicon wafer

Method of producing silicon wafer and silicon wafer

Silicon boat with protective film, method of manufacture thereof, a...

Method for manufacturing single-crystal-silicon wafers

Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...

Method for heat treatment of silicon wafers and silicon wafer

Method of producing a bonded wafer and the bonded wafer

Method of producing anneal wafer and anneal wafer

Production method for annealed wafer