Masaru Kanamori

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of making fault-free surface zone in semiconductor devices b...
- Patent number 4,376,657
- Issue date Mar 15, 1983
- VLSI Technology Research Association
- Kazutoshi Nagasawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nondefective zone in silicon single crystal wafer...
- Patent number 4,314,595
- Issue date Feb 9, 1982
- Vlsi Technology Research Association
- Kazuhiko Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS