Masaru Nakamichi

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 9,530,485
- Issue date Dec 27, 2016
- Renesas Electronics Corporation
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 9,111,636
- Issue date Aug 18, 2015
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 8,797,791
- Issue date Aug 5, 2014
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 8,437,179
- Issue date May 7, 2013
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a nonvolatile semiconductor memory device,...
- Patent number 8,390,048
- Issue date Mar 5, 2013
- Renesas Electronics Corporation
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 8,232,589
- Issue date Jul 31, 2012
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 8,125,017
- Issue date Feb 28, 2012
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 7,964,484
- Issue date Jun 21, 2011
- Renesas Electronics Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a nonvolatile semiconductor memory device,...
- Patent number 7,863,135
- Issue date Jan 4, 2011
- Renesas Electronics Corporation
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a nonvolatile semiconductor memory device,...
- Patent number 7,663,176
- Issue date Feb 16, 2010
- Renesas Technology Corp.
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 7,569,881
- Issue date Aug 4, 2009
- Renesas Technology Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 7,388,238
- Issue date Jun 17, 2008
- Renesas Technology Corp.
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing a nonvolatile semiconductor memory device,...
- Patent number 7,371,631
- Issue date May 13, 2008
- Renesas Technology Corp.
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 7,087,942
- Issue date Aug 8, 2006
- Renesas Technology Corporation
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 7,045,864
- Issue date May 16, 2006
- Renesas Technology Corp.
- Kota Funayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 6,998,674
- Issue date Feb 14, 2006
- Renesas Technology Corp.
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor integrated circuit device with reduced leakage current
- Patent number 6,885,057
- Issue date Apr 26, 2005
- Renesas Technology Corp.
- Kenichi Osada
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT
- Publication number 20150357026
- Publication date Dec 10, 2015
- RENESAS ELECTRONICS CORPORATION
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Integrated Circuit Device with Reduced Leakage Current
- Publication number 20150155031
- Publication date Jun 4, 2015
- RENESAS ELECTRONICS CORPORATION
- Kenichi OSADA
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT
- Publication number 20130229860
- Publication date Sep 5, 2013
- RENESAS ELECTRONICS CORPORATION
- Kenichi Osada
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT
- Publication number 20120257443
- Publication date Oct 11, 2012
- RENESAS ELECTRONICS CORPORATION
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Integrated Circuit Device with Reduced Leakage Current
- Publication number 20120113709
- Publication date May 10, 2012
- RENESAS ELECTRONICS CORPORATION
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20110215414
- Publication date Sep 8, 2011
- Renesas Electronics Corporation
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...
- Publication number 20110024820
- Publication date Feb 3, 2011
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...
- Publication number 20100144108
- Publication date Jun 10, 2010
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20090269899
- Publication date Oct 29, 2009
- RENESAS TECHNOLOGY CORPORATION
- Kenichi OSADA
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20080203437
- Publication date Aug 28, 2008
- RENESAS TECHNOLOGY CORPORATION
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...
- Publication number 20080206975
- Publication date Aug 28, 2008
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...
- Publication number 20080203466
- Publication date Aug 28, 2008
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20080029825
- Publication date Feb 7, 2008
- Kentaro Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20060226449
- Publication date Oct 12, 2006
- RENESAS TECHNOLOGY CORP.
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20060076610
- Publication date Apr 13, 2006
- RENESAS TECHNOLOGY CORP.
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method of manufacturing a nonvolatile semiconductor memory device,...
- Publication number 20060003508
- Publication date Jan 5, 2006
- Takeshi Sakai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20050174141
- Publication date Aug 11, 2005
- Kenichi Osada
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor integrated circuit device
- Publication number 20030006433
- Publication date Jan 9, 2003
- Kota Funayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit device with reduced leakage current
- Publication number 20020179940
- Publication date Dec 5, 2002
- Kenichi Osada
- H01 - BASIC ELECTRIC ELEMENTS

Masaru Nakamichi

Person

Patents Grantslast 30 patents

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Method of manufacturing a nonvolatile semiconductor memory device,...

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Method of manufacturing a nonvolatile semiconductor memory device,...

Method of manufacturing a nonvolatile semiconductor memory device,...

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Method of manufacturing a nonvolatile semiconductor memory device,...

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Patents Applicationslast 30 patents

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT

Semiconductor Integrated Circuit Device with Reduced Leakage Current

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH REDUCED LEAKAGE CURRENT

Semiconductor Integrated Circuit Device with Reduced Leakage Current

Semiconductor integrated circuit device with reduced leakage current

METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...

METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...

METHOD OF MANUFACTURING A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE,...

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device with reduced leakage current

Method of manufacturing a nonvolatile semiconductor memory device,...

Semiconductor integrated circuit device with reduced leakage current

Semiconductor integrated circuit device

Semiconductor integrated circuit device with reduced leakage current