Masashi ISHIDA

Person

Yokkaichi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors having concave drain extension region and...
- Patent number 12,041,770
- Issue date Jul 16, 2024
- SanDisk Technologies LLC
- Masashi Ishida
- G11 - INFORMATION STORAGE
Information Patent Grant
High voltage field effect transistors with self-aligned silicide co...
- Patent number 11,626,496
- Issue date Apr 11, 2023
- SanDisk Technologies LLC
- Jun Akaiwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field effect transistors with self-aligned silicide co...
- Patent number 11,575,015
- Issue date Feb 7, 2023
- SanDisk Technologies LLC
- Mitsuhiro Togo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040239
- Publication date Jan 30, 2025
- WESTERN DIGITAL TECHNOLOGIES, INC.,
- Sriharsha KARUMURI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...
- Publication number 20240250119
- Publication date Jul 25, 2024
- SANDISK TECHNOLOGIES LLC
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING CONCAVE DRAIN EXTENSION REGION AND...
- Publication number 20230209821
- Publication date Jun 29, 2023
- SANDISK TECHNOLOGIES LLC
- Masashi Ishida
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...
- Publication number 20220399448
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Mitsuhiro TOGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...
- Publication number 20220399447
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Jun AKAIWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH METAL-INSULATOR-SEMICOND...
- Publication number 20220278209
- Publication date Sep 1, 2022
- SANDISK TECHNOLOGIES LLC
- Teruyuki MINE
- H01 - BASIC ELECTRIC ELEMENTS

Masashi ISHIDA

Person

Patents Grantslast 30 patents

Field effect transistors having concave drain extension region and...

High voltage field effect transistors with self-aligned silicide co...

High voltage field effect transistors with self-aligned silicide co...

Patents Applicationslast 30 patents

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SUPERJUNCTIONS AND METHO...

FIELD EFFECT TRANSISTORS HAVING CONCAVE DRAIN EXTENSION REGION AND...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED SILICIDE CO...

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH METAL-INSULATOR-SEMICOND...