Masashi Kuwahara

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Kawasaki, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with a main current cell region and a current...
- Patent number 6,060,744
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Masashi Kuwahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS device having a trench gate structure
- Patent number 5,821,580
- Issue date Oct 13, 1998
- Kabushiki Kaisha Toshiba
- Masashi Kuwahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductivity-modulated semiconductor device with high breakdown vol...
- Patent number 5,444,271
- Issue date Aug 22, 1995
- Kabushiki Kaisha Toshiba
- Masashi Kuwahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor having high breakdown voltage
- Patent number 5,331,184
- Issue date Jul 19, 1994
- Kabushiki Kaisha Toshiba
- Masashi Kuwahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor with a shortened carrier lifetime...
- Patent number 5,124,772
- Issue date Jun 23, 1992
- Kabushiki Kaisha Toshiba
- Makoto Hideshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 4,764,802
- Issue date Aug 16, 1988
- Kabushiki Kaisha Toshiba
- Masashi Kuwahara
- H01 - BASIC ELECTRIC ELEMENTS