Masashi Maekawa

Person

Nara-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Selective recrystallization of semiconductor
- Patent number 8,466,048
- Issue date Jun 18, 2013
- Sharp Kabushiki Kaisha
- Yoshiyuki Itoh
- G02 - OPTICS
Information Patent Grant
Crystalline semiconductor film and production method thereof, and s...
- Patent number 7,153,359
- Issue date Dec 26, 2006
- Sharp Kabushiki Kaisha
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal TFT from continuous transition metal delivery method
- Patent number 6,784,455
- Issue date Aug 31, 2004
- Sharp Laboratories of America, Inc.
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal TFT from continuous transition metal delivery method
- Patent number 6,620,661
- Issue date Sep 16, 2003
- Sharp Laboratories of America, Inc.
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal TFT from continuous transition metal delivery method
- Patent number 6,346,437
- Issue date Feb 12, 2002
- Sharp Laboratories of America, Inc.
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating thin film transistors
- Patent number 6,162,667
- Issue date Dec 19, 2000
- Sharp Kabushiki Kaisha
- Takashi Funai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing monocrystalline thin-film
- Patent number 4,801,351
- Issue date Jan 31, 1989
- Agency of Industrial Science and Technology
- Katunobu Awane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming single crystal silicon on insulator by irradiating a laser...
- Patent number 4,719,183
- Issue date Jan 12, 1988
- Sharp Kabushiki Kaisha
- Masashi Maekawa
- G02 - OPTICS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20110315995
- Publication date Dec 29, 2011
- Sharp Kabushiki Kaisha
- Yoshiyuki Itoh
- G02 - OPTICS
Information Patent Application
Crystalline semiconductor film and production method thereof, and s...
- Publication number 20030061984
- Publication date Apr 3, 2003
- Masashi Maekawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Single crystal TFT from continuous transition metal delivery method
- Publication number 20020090801
- Publication date Jul 11, 2002
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single crystal TFT from continuous transition metal delivery method
- Publication number 20020086471
- Publication date Jul 4, 2002
- Masashi Maekawa
- H01 - BASIC ELECTRIC ELEMENTS

Masashi Maekawa

Person

Patents Grantslast 30 patents

Selective recrystallization of semiconductor

Crystalline semiconductor film and production method thereof, and s...

Single crystal TFT from continuous transition metal delivery method

Single crystal TFT from continuous transition metal delivery method

Single crystal TFT from continuous transition metal delivery method

Method for fabricating thin film transistors

Method of manufacturing monocrystalline thin-film

Forming single crystal silicon on insulator by irradiating a laser...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Crystalline semiconductor film and production method thereof, and s...

Single crystal TFT from continuous transition metal delivery method

Single crystal TFT from continuous transition metal delivery method